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US 2026/0282855 A1Published application
Method of forming semiconductor device
AssigneeNanya Technology Corporation
InventorTai-Wei Chen
Life of this patent
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Abstract
A method of forming a semiconductor device includes the following steps. A trench is formed in a semiconductor layer. A surface treatment is performed to reduce a surface roughness of the trench. An oxide layer is formed in the trench.
Claims10
A method of forming a semiconductor device, comprising:
- forming a trench in a semiconductor layer;
- performing a surface treatment to reduce a surface roughness of the trench;
- and
- forming an oxide layer in the trench.
1 more element
Dependencies are inferred from the claim text.