H10W 10/50
Isolation regions based on field-effect
H10W10/50 (Isolation regions based on field-effect) appears on 432 US grants and 380 published applications in this corpus.
Search patents in H10W- Granted patents
- 432
- Published applications
- 380
- Assignees
- 172
- Inventors
- 854
- Latest grant
- 7 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 3 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 2 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 3 | 0 |
| 1992 | 5 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 7 | 0 |
| 1998 | 12 | 0 |
| 1999 | 19 | 0 |
| 2000 | 12 | 0 |
| 2001 | 14 | 7 |
| 2002 | 19 | 6 |
| 2003 | 9 | 11 |
| 2004 | 12 | 4 |
| 2005 | 4 | 12 |
| 2006 | 3 | 11 |
| 2007 | 4 | 4 |
| 2008 | 5 | 8 |
| 2009 | 3 | 5 |
| 2010 | 6 | 0 |
| 2011 | 4 | 5 |
| 2012 | 4 | 6 |
| 2013 | 5 | 8 |
| 2014 | 7 | 15 |
| 2015 | 13 | 15 |
| 2016 | 12 | 14 |
| 2017 | 17 | 13 |
| 2018 | 15 | 19 |
| 2019 | 20 | 21 |
| 2020 | 22 | 35 |
| 2021 | 27 | 38 |
| 2022 | 25 | 52 |
| 2023 | 27 | 33 |
| 2024 | 35 | 20 |
| 2025 | 23 | 13 |
| 2026 | 7 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and manufacturing method thereof7 Jul 2026US 12,677,449 B2Panjit International Inc.
- Transistors with source-connected field plates26 May 2026US 12,641,851 B2NXP B. V.
- Vertical trench gate fet with split gate7 Apr 2026US 12,598,772 B2Texas Instruments Incorporated
- Group III nitride-based transistor device having a conductive redistribution structure17 Mar 2026US 12,581,712 B2Infineon Technologies AG
- Semiconductor device and method for manufacturing the same3 Mar 2026US 12,568,671 B2Mitsubishi Electric Corporation
- Vertical trench gate fet with split gate20 Aug 2026US 2026/0247663 A1
- Semiconductor power device with shielding layer28 May 2026US 2026/0150320 A1Huawei Digital Power Technologies Co., Ltd.
- Semiconductor device and electronic system including the same7 May 2026US 2026/0129860 A1Samsung Electronics Co., Ltd.
- Contact field plate7 May 2026US 2026/0129940 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Lateral electrostatic discharge device with nanosheet gates2 Apr 2026US 2026/0096220 A1International Business Machines Corporation
Most cited
By later US patents
- Method of making a customized semiconductor integrated device157US 4,745,084 AVLSI Technology, Inc. · 1988
- Trench isolation using gated sidewalls112US 5,275,965 AMicron Semiconductor, Inc. · 1994
- Integrated circuit buffer devices having built-in electrostatic discharge protection thyristors95US 5,895,940 ASamsung Electronics Co., Ltd. · 1999
- VDMOS transistor with improved breakdown characteristics88US 5,430,316 ASGS-Thomson Microeletronics, S.r.l. · 1995
- Schottky diode with dielectric trench82US 6,303,969 B12001