Group III nitride-based transistor device having a conductive redistribution structure
AssigneeInfineon Technologies AG
InventorsAlbert Birner, Helmut Brech, John Twynam
Life of this patent
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Abstract
In an embodiment, a Group III nitride-based transistor device includes a source electrode, a drain electrode and a gate electrode positioned on a first major surface of a Group III nitride based-based layer, wherein the gate electrode is laterally arranged between the source electrode and the drain electrode, a passivation layer arranged on the first major surface and a field plate coupled to the source electrode, the field plate having a lower surface arranged on the passivation layer. The field plate is laterally arranged between and laterally spaced apart from the gate electrode and the drain electrode.
Claims21
A Group III nitride-based transistor device, comprising:
- an ohmic source contact, an ohmic drain contact and a gate positioned on a first major surface of a Group III nitride based-based layer, wherein the gate is laterally arranged between the ohmic source contact and the ohmic drain contact;
- a passivation layer arranged on the first major surface;
- a field plate coupled to the ohmic source contact, the field plate having a lower surface arranged on the passivation layer, the field plate being laterally arranged between and laterally spaced apart from the gate and the ohmic drain contact, wherein the ohmic source contact, the gate, the ohmic drain contact and the field plate each have an elongate form and extend on the first major surface in a longitudinal direction substantially parallel to one another;
- and
- a conductive redistribution structure arranged above the ohmic source contact, the gate, the ohmic drain contact and the field plate and comprising a lateral gate redistribution structure and a lateral field plate redistribution structure that are substantially coplanar at a position laterally between the ohmic source contact and the ohmic drain contact,
- wherein the ohmic source contact comprises a base portion having a conductive surface,
- wherein the conductive surface comprises a peripheral portion and a central portion,
- wherein the peripheral portion and the central portion are substantially coplanar and of differing composition.
A Group III nitride-based transistor device, comprising:
- an ohmic source contact, an ohmic drain contact and a gate positioned on a first major surface of a Group III nitride based-based layer, wherein the gate is laterally arranged between the ohmic source contact and the ohmic drain contact;
- a passivation layer arranged on the first major surface;
- a field plate coupled to the ohmic source contact, the field plate having a lower surface arranged on the passivation layer, the field plate being laterally arranged between and laterally spaced apart from the gate and the ohmic drain contact, wherein the ohmic source contact, the gate, the ohmic drain contact and the field plate each have an elongate form and extend on the first major surface in a longitudinal direction substantially parallel to one another;
- and
- a conductive redistribution structure arranged above the ohmic source contact, the gate, the ohmic drain contact and the field plate and comprising a lateral gate redistribution structure and a lateral field plate redistribution structure that are substantially coplanar at a position laterally between the ohmic source contact and the ohmic drain contact,
- wherein the ohmic drain contact comprises a base portion having a conductive surface,
- wherein the conductive surface comprises a peripheral portion and a central portion,
- wherein the peripheral portion and the central portion are substantially coplanar and of differing composition.
Dependencies are inferred from the claim text.