Semiconductor device and method for manufacturing the same
AssigneeMitsubishi Electric Corporation
InventorsTakuichiro Shitomi, Manabu Yoshino, Toshihiro Imasaka
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Abstract
A resistive field plate is arranged in a spiral shape in plan view so as to gradually approach an inner main electrode from an outer main electrode. The plurality of floating layers are arranged radially toward the low potential region around the high potential region in plan view. The resistive field plate is provided on the plurality of floating layers via an interlayer insulating film, and thus has a floating step reflecting a film thickness of each of the plurality of floating layers. That is, the resistive field plate is provided in such a manner that the floating step is repeatedly generated along the lapping direction.
Claims6
A semiconductor device including a high potential region and a low potential region provided on a semiconductor substrate, the low potential region being provided away from the high potential region so as to surround the high potential region, the semiconductor device comprising:
- a first main electrode provided to be electrically connected to the high potential region;
- a second main electrode provided to be electrically connected to the low potential region;
- and
- an inter-electrode connection portion that is provided in a high withstand voltage separation region between the first and second main electrodes and electrically connects the first main electrode and the second main electrode,
- wherein the inter-electrode connection portion includes a resistive field plate provided in a spiral shape in plan view so as to surround the high potential region,
- the semiconductor device further comprising a conductive floating layer provided below the resistive field plate via an insulating film in the high withstand voltage separation region, wherein
- the conductive floating layer, the first main electrode, and the second main electrode are provided on the same formation layer, and
- the resistive field plate has a floating step reflecting a film thickness of the conductive floating layer.
Dependencies are inferred from the claim text.