Semiconductor power device with shielding layer

Abstract

The disclosure relates to a semiconductor power device (100), comprising: a semiconductor substrate (110); a transition layer (111) formed above the semiconductor substrate (110); a Gallium-Nitride, GaN, channel layer (122) formed above the transition layer (111); an Aluminum Gallium-Nitride, AlGaN, barrier layer (130) formed on top of the GaN channel layer (122); a first GaN power device (102) and a second GaN power device (103) formed next to each other in the AlGaN barrier layer (130) and the GaN channel layer (122); and a shielding layer (101) formed between the GaN channel layer (122) and the semiconductor substrate (110). The shielding layer (101) is configured to create a 2-dimensional hole gas, 2DHG, for shielding the first GaN power device (102) and the second GaN power device (103) against an electrical potential of the semiconductor substrate (110).

Dependencies are inferred from the claim text.