Contact field plate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTao-Cheng Liu, Ying-Hsun Chen
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Abstract
A semiconductor device and method of forming the semiconductor device are disclosed. The method includes forming first and second conductive structures on a semiconductor substrate, forming one or more dielectric layers between the first and second conductive structures, covering the one or more dielectric layers with a first masking layer, forming a first opening in the first masking layer, depositing a conductive material in the first opening to form a field plate structure, and electrically connecting the field plate structure to another conductor.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming first and second conductive structures on a semiconductor substrate;
- forming one or more dielectric layers between the first and second conductive structures;
- covering the one or more dielectric layers with a first masking layer;
- forming a first opening in the first masking layer;
- depositing a conductive material in the first opening to form a field plate structure;
- and
- electrically connecting the field plate structure to another conductor.
A method of forming a semiconductor device, comprising:
- forming a gate structure and a drain region on a semiconductor substrate;
- forming at least one dielectric layer comprising a contact etch stop layer (CESL) over the gate structure and the drain region;
- forming a masking layer over the at least one dielectric layer;
- etching an opening in the masking layer that extends through the masking layer and into the at least one dielectric layer;
- filling the opening with a first conductive material to form a field plate structure;
- removing the masking layer;
- and
- forming a first inter-layer dielectric (ILD) layer over the field plate structure and the at least one dielectric layer.
A method of forming a semiconductor device, comprising:
- forming first and second conductive structures on a semiconductor substrate;
- forming one or more dielectric layers between the first and second conductive structures;
- forming a field plate structure comprising a first conductive material over at least a portion of the one or more dielectric layers;
- depositing an inter-layer dielectric (ILD) over the field plate structure;
- etching a contact opening through the ILD to expose the field plate structure, wherein the field plate structure serves as an etch stop during the etching of the contact opening;
- and
- depositing a second conductive material in the contact opening to form a contact electrically coupled to the field plate structure.
Dependencies are inferred from the claim text.