US 12,362,225 B2Granted

Method for fabricating germanium/silicon on insulator in radio frequency sputter system

AssigneeIndian Institute of Technology Bombay

InventorsUdayan Ganguly, Apurba Laha, Suddhasatta Mahapatra, Amita, Krista Roluahpuia Khiangte

Life of this patent

Estimating the term…

Loading patent…

Abstract

Embodiments herein disclose a method providing deposition of Gadolinium Oxide (Gd2O3) on a semiconductor substrate. The method comprises of selecting, in an RF-sputter system, a predefined substrate and depositing, in an Ar-plasma struck, the Gd2O3, over the predefined substrate to obtain a layer of the Gd2O3 over the predefined substrate. The Gd2O3 is grown epitaxially over the predefined substrate. The method further provides performing, annealing, of the layer of the Gd2O3 over the predefined substrate at a predefined temperature for a predefined time and obtaining, a layer of the Gd2O3, over the predefined substrate. Embodiment also provides a method for fabricating Semiconductor on Insulator Substrate (SIS).

Claims6

Dependent claims

A method for fabricating Semiconductor on Insulator Substrate (SIS), the method comprising:

depositing an isolation layer of Gadolinium oxide (Gd2O3) over a preselected substrate for obtaining a single crystalline Gd2O3 seed layer at a predefined temperature, wherein the deposition is performed in a Radio Frequency (RF)-sputter system, wherein the predefined temperature for depositing the isolation layer of Gd2O3 is in a range of 500° C.-800° C.;
depositing a Group IV semiconductor layer including Silicon (Si) or Germanium (Ge) over the single crystalline Gd2O3 seed layer at a room temperature;
forming a Gd2O3 capping layer over the deposited Group IV semiconductor layer over the single crystalline Gd2O3 seed layer at the predefined temperature in the range of 500° C.-800° C.;
and
removing the Gd2O3 capping layer deposited over the Group IV semiconductor layer by using an etching process for obtaining the SIS.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/253,462Filed 21 Jun 2019
Priority: IN 20182102339422 Jun 2018
Published: US 2021/0249300 A112 Aug 2021
Granted: 15 Jul 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

H10P 90/1912
Preparing SOI wafers: using selective deposition, e.g. epitaxial lateral overgrowth [ELO] or selective deposition of single crystal silicon
H10W 10/018
Of isolation regions comprising dielectric materials: using selective deposition of crystalline silicon, e.g. using epitaxial growth of silicon
H10P 14/6329
Deposition from the gas or vapour phase: using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
H10P 14/69396
Characterised by the metal: the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium