H10W 10/021
Of air gaps
Official title: {of air gaps}
H10W10/021 (Of air gaps) appears on 1,722 US grants and 1,711 published applications in this corpus.
Search patents in H10W- Granted patents
- 1,722
- Published applications
- 1,711
- Assignees
- 301
- Inventors
- 2,752
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 7 | 0 |
| 1978 | 10 | 0 |
| 1979 | 5 | 0 |
| 1980 | 6 | 0 |
| 1981 | 6 | 0 |
| 1982 | 4 | 0 |
| 1983 | 4 | 0 |
| 1984 | 3 | 0 |
| 1985 | 4 | 0 |
| 1986 | 3 | 0 |
| 1987 | 7 | 0 |
| 1988 | 3 | 0 |
| 1989 | 3 | 0 |
| 1990 | 7 | 0 |
| 1991 | 5 | 0 |
| 1992 | 11 | 0 |
| 1993 | 8 | 0 |
| 1994 | 15 | 0 |
| 1995 | 11 | 0 |
| 1996 | 11 | 0 |
| 1997 | 14 | 0 |
| 1998 | 13 | 0 |
| 1999 | 19 | 0 |
| 2000 | 23 | 0 |
| 2001 | 21 | 7 |
| 2002 | 23 | 21 |
| 2003 | 27 | 28 |
| 2004 | 23 | 31 |
| 2005 | 16 | 26 |
| 2006 | 22 | 29 |
| 2007 | 23 | 18 |
| 2008 | 19 | 30 |
| 2009 | 16 | 21 |
| 2010 | 24 | 19 |
| 2011 | 25 | 33 |
| 2012 | 15 | 50 |
| 2013 | 47 | 66 |
| 2014 | 55 | 90 |
| 2015 | 81 | 94 |
| 2016 | 107 | 96 |
| 2017 | 108 | 118 |
| 2018 | 104 | 95 |
| 2019 | 112 | 102 |
| 2020 | 112 | 132 |
| 2021 | 113 | 122 |
| 2022 | 100 | 135 |
| 2023 | 97 | 124 |
| 2024 | 99 | 93 |
| 2025 | 92 | 95 |
| 2026 | 33 | 36 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,475 B2Taiwan Semiconductor Manfacturing Company, Ltd.
- Manufacturing method of semiconductor device25 Aug 2026US 12,720,744 B2SK hynix Inc.
- Substrate processing method25 Aug 2026US 12,721,116 B2ASM IP Holding B. V.
- Semiconductor device and method of forming the same11 Aug 2026US 12,707,954 B2STMicroelectronics International N. V.
- Wall that includes a gas between metal gates of a semiconductor device4 Aug 2026US 12,701,780 B2Intel Corporation
- Integrated circuit structure with backside airgap between transistors1 Oct 2026US 2026/0304938 A1Intel Corporation
- Semiconductor device structure with gate stack17 Sep 2026US 2026/0282482 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method17 Sep 2026US 2026/0282512 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of fabricating the same10 Sep 2026US 2026/0271689 A1Samsung Electronics Co., Ltd.
- Semiconductor device structure and manufacturing method thereof6 Aug 2026US 2026/0231743 A1Winbond Electronics Corp.
Most cited
By later US patents
- Semiconductor memory devices including an air gap and methods of fabricating the same480US 9,166,012 B2Samsung Electronics Co., Ltd. · 2015
- Air gap isolation in non-volatile memory using sacrificial films473US 9,123,577 B2SanDisk Technologies LLC · 2015
- Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus388US 6,521,511 B1Seiko Epson Corporation · 2003
- Flowable carbon film by FCVD hardware using remote plasma PECVD347US 9,219,006 B2APPLIED Materials.Inc. · 2015
- Low dielectric constant intermetal dielectric (IMD) by formation of air gap between metal lines345US 6,022,802 ATaiwan Semiconductor Manufacturing Company.Ltd · 2000