US 2026/0304938 A1 · INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE AIRGAP BETWEEN TRANSISTORS

Abstract

Examples described herein include integrated circuit (IC) structures with backside airgaps between transistors. In one example, a backside airgap may be formed in a back-end of line process by flipping over the IC structure and forming an airgap from the back side. In one example, an IC structure includes a first transistor and a second transistor adjacent to the first transistor, a contact structure including a conductive material over and coupled with the first transistor, an airgap between the first transistor and the second transistor and coplanar with contact structure, and an insulator material below the airgap.

Claims20

Dependent claims

An integrated circuit (IC) structure, comprising:

a first stack of two or more first nanoribbons of a semiconductor material stacked over one another;
a second stack of two or more nanoribbons of the semiconductor material stacked over one another, wherein the second stack is adjacent to the first stack;
an airgap between the first stack and the second stack;
and
an insulator material between the first stack and the second stack and below the airgap.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

19/090,972Filed 26 Mar 2025

Published

1 Oct 2026

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10D 84/851
Complementary IGFETs, e.g. CMOS: comprising IGFETs having stacked nanowire, nanosheet or nanoribbon channels
H10D 30/47
FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels: having two-dimensional [2D] charge…
H10D 30/502
FETs having stacked nanowire, nanosheet or nanoribbon channels: characterised by the stacked channels
H10D 62/121
Nanowire, nanosheet or nanotube semiconductor bodies: oriented parallel to substrates

Integrated circuit structure with backside airgap between transistors

Life of this patent

Integrated circuit structure with backside airgap between transistors

Life of this patent

Abstract

Claims20