Manufacturing method of semiconductor device
AssigneeSK hynix Inc.
InventorKang Sik Choi
Life of this patent
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Abstract
A manufacturing method of a semiconductor device is provided. The manufacturing method of the semiconductor device includes forming a sacrificial group including a layer above the doped semiconductor layer, forming a stack structure above the sacrificial group, forming a slit passing through the stack structure, forming a spacer insulating layer over a sidewall of the slit, forming a horizontal space by removing the sacrificial group through the slit, forming a semiconductor pattern over a surface of the horizontal space to define a gap in the horizontal space, and forming an impurity region in the semiconductor pattern.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a sacrificial group including a layer that has etch selectivity with respect to a doped semiconductor layer above the doped semiconductor layer;
- forming a stack structure above the sacrificial group;
- forming a slit passing through the stack structure;
- forming a spacer insulating layer over a sidewall of the slit to open a portion of the slit;
- forming a horizontal space by removing the sacrificial group through the portion of the slit;
- forming a semiconductor pattern over a surface of the horizontal space to define a gap in the horizontal space;
- and
- forming an impurity region in the semiconductor pattern.
A method of manufacturing a semiconductor device, the method comprising:
- forming a sacrificial group including a layer that has etch selectivity with respect to a doped semiconductor layer above the doped semiconductor layer;
- forming a stack structure above the sacrificial group;
- forming a hole passing through the stack structure and extending into the doped semiconductor layer;
- forming a multilayer memory layer over a surface of the hole;
- forming a channel pillar over the multilayer memory layer;
- forming a slit passing through the stack structure;
- forming a spacer insulating layer over a sidewall of the slit to open a portion of the slit;
- forming a horizontal space exposing a sidewall of the channel pillar which is between the doped semiconductor layer and the stack structure, by removing the sacrificial group and a portion of the multilayer memory layer;
- forming a semiconductor pattern over a surface of the horizontal space to define a gap in the horizontal space;
- and
- forming an impurity region in the semiconductor pattern.
Dependencies are inferred from the claim text.