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US 12,701,780 B2Granted
Wall that includes a gas between metal gates of a semiconductor device
AssigneeIntel Corporation
InventorsSukru Yemenicioglu, Leonard P. Guler, Hongqian Sun, Shengsi Liu, Tahir Ghani, Baofu Zhu
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Abstract
Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for forming a wall within a metal gate cut in a transistor layer of a semiconductor device, where the wall includes a volume of a gas such as air, nitrogen, or another inert gas. Other embodiments may be described and/or claimed.
Claims25
A semiconductor device comprising:
- a first stack of one or more nanoribbons;
- a second stack of one or more nanoribbons;
- a wall between the first stack of the one or more nanoribbons and the second stack of the one or more nanoribbons, wherein the wall extends from below a bottom of the first stack of the one or more nanoribbons and below a bottom of the second stack of the one or more nanoribbons to above a top of the first stack of the one or more nanoribbons and to above a top of the second stack of the one or more nanoribbons;
- wherein the wall includes a volume of a gas;
- a first metal surrounding the first stack of one or more nanoribbons;
- and
- a second metal surrounding the second stack of one or more nanoribbons, wherein the volume of the gas of the wall extends to below a bottom of the first metal and a bottom of the second metal.
4 more elements
A semiconductor device comprising:
- a first stack of nanoribbons surrounded by a first metal gate;
- a second stack of nanoribbons surrounded by a second metal gate;
- and
- a wall between the first stack of nanoribbons and the second stack of nanoribbons, wherein the wall electrically isolates the first metal gate and the second metal gate from each other, and wherein the wall includes a volume of a gas, wherein the volume of the gas of the wall extends to below a bottom of the first metal gate and a bottom of the second metal gate.
1 more element
A method comprising:
- providing a semiconductor device that includes a first stack of nanoribbons surrounded by a first metal and a second stack of nanoribbons surrounded by a second metal;
- and
- forming a wall in the semiconductor device between the first metal and the second metal, wherein the wall electrically isolates the first metal and the second metal from each other, and wherein the wall includes a volume of a gas, wherein the volume of the gas of the wall extends to below a bottom of the first metal and a bottom of the second metal.
Dependencies are inferred from the claim text.