Semiconductor device and method of forming the same
AssigneeSTMicroelectronics International N.V.
InventorsPascal Fornara, Antonin Chollet, Julien Amouroux
Life of this patent
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Abstract
A method for manufacturing a semiconductor device includes depositing a first protective layer over a first conductive feature and a second conductive feature. The first protective layer covers respective sidewalls and top surfaces of the first conductive feature and the second conductive feature. A portion of the first protective layer between the first conductive feature and the second conductive feature is removed. After removing the portion of the first protective layer, an intermetal dielectric layer is formed between the first conductive feature and the second conductive feature.
Claims20
A method for manufacturing a semiconductor device, the method comprising:
- forming a first metal line and a second metal line over a substrate;
- conformally depositing a first dielectric layer over the first metal line and the second metal line, wherein the first dielectric layer comprises a dent between the first metal line and the second metal line;
- recessing the first dielectric layer with an anisotropic etch process, wherein after the anisotropic etch process the dent extends below top surfaces of the first metal line and the second metal line;
- forming a first protective layer over the first dielectric layer;
- removing a portion of the first protective layer over the dent, wherein remaining portions of the first protective layer have respective umbrella shaped profiles in a cross-sectional view;
- etching a hole through the first dielectric layer in the position of the dent;
- and
- widening the hole into a space with an isotropic etch process.
A method for manufacturing a semiconductor device, the method comprising:
- forming a first dielectric layer over a first metal line and a second metal line, wherein the first dielectric layer comprises a dent between the first metal line and the second metal line;
- extending the dent below top surfaces of the first metal line and the second metal line by performing a first etch process on the first dielectric layer;
- forming a protective layer over the first dielectric layer;
- forming umbrella shaped profiles in the protective layer by removing a portion of the protective layer over the dent;
- etching a hole through the first dielectric layer in the position of the dent;
- and
- widening the hole into a space with a second etch process.
A method for manufacturing a semiconductor device, the method comprising:
- conformally depositing a first dielectric layer over a first metal line and a second metal line;
- recessing the first dielectric layer with a first etch process, a dent between the first metal line and the second metal line extending below top surfaces of the first metal line and the second metal line after the first etch process;
- forming a protective layer over the first dielectric layer;
- removing a portion of the protective layer over the dent, remaining portions of the protective layer having respective umbrella shaped profiles in a cross-sectional view;
- etching a hole through the first dielectric layer in the position of the dent;
- and
- widening the hole with a second etch process.
Dependencies are inferred from the claim text.