Dendrite mitigation of passive components
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJui Shen Chang, Li-Hsien Huang, Chen-Nan Chiu, Yao-Chun Chuang, Yinlung Lu
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJui Shen Chang, Li-Hsien Huang, Chen-Nan Chiu, Yao-Chun Chuang, Yinlung Lu
Estimating the term…
A passive device of a semiconductor substrate and method of making same. The passive device includes first and second top metal components on a substrate core having an insulator substrate. A passivation layer is formed over the top metal components and insulator substrate. A first conductive component is formed on the passivation layer electrically contacting the first top metal component, as well as a second conductive component that is formed on the passivation layer and electrically contacts the second top metal component. In addition, the device includes an insulator material that is formed over the first conductive component and the second conductive component. A cavity is defined by the insulator material between the first conductive component and the second conductive component. The device further includes an ABF plug component that is formed in the cavity between the first conductive component and the second conductive component.
A method comprising:
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Dependencies are inferred from the claim text.