Apparatus with thickness control mechanism and methods for manufacturing the same

A method of manufacturing a semiconductor device, the method comprising:

• providing a semiconductor substrate having a reference surface opposite a back portion;
• forming functional circuitry separated by local trenches on and/or through the reference surface;
• etching a marker trench having a target depth deeper than the local trenches on the reference surface;
• depositing an oxide material over the reference surface, wherein the oxide material fills the marker trench and forms an oxide layer;
• attaching the semiconductor substrate over a carrier wafer, wherein the reference surface faces the carrier wafer and a layer of the oxide is disposed between the semiconductor substrate and the carrier wafer;
• and
• thinning the semiconductor substrate to a thickness matching the target depth based on removing the back portion, wherein the semiconductor substrate is thinned until the oxide within the marker trench is exposed.