H10P 70/27
During, before or after processing of conductive materials
Official title: {during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers}
H10P70/27 (During, before or after processing of conductive materials) appears on 2,269 US grants and 2,582 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,269
- Published applications
- 2,582
- Assignees
- 482
- Inventors
- 5,082
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 3 | 0 |
| 1982 | 5 | 0 |
| 1983 | 4 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 6 | 0 |
| 1993 | 9 | 0 |
| 1994 | 16 | 0 |
| 1995 | 19 | 0 |
| 1996 | 11 | 0 |
| 1997 | 31 | 0 |
| 1998 | 33 | 0 |
| 1999 | 50 | 0 |
| 2000 | 72 | 0 |
| 2001 | 90 | 36 |
| 2002 | 92 | 100 |
| 2003 | 89 | 107 |
| 2004 | 84 | 120 |
| 2005 | 68 | 115 |
| 2006 | 52 | 124 |
| 2007 | 56 | 110 |
| 2008 | 60 | 109 |
| 2009 | 59 | 89 |
| 2010 | 89 | 93 |
| 2011 | 70 | 63 |
| 2012 | 74 | 70 |
| 2013 | 67 | 83 |
| 2014 | 61 | 80 |
| 2015 | 63 | 121 |
| 2016 | 89 | 114 |
| 2017 | 91 | 102 |
| 2018 | 78 | 112 |
| 2019 | 90 | 103 |
| 2020 | 100 | 124 |
| 2021 | 93 | 103 |
| 2022 | 81 | 130 |
| 2023 | 79 | 119 |
| 2024 | 83 | 94 |
| 2025 | 81 | 98 |
| 2026 | 55 | 63 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for treating substrate6 Oct 2026US 12,753,342 B2FUJIFILM Corporation
- Cleaning solution, method for cleaning substrate, and method for manufacturing semiconductor6 Oct 2026US 12,753,366 B2Tokyo Ohka Kogyo.Co., Ltd.
- Wet cleaning tool and method6 Oct 2026US 12,757,668 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of operating a PVD apparatus22 Sep 2026US 12,745,577 B2SPTS Technologies Limited
- Selective etching and deposition of memory layers to provide capacitor-to-active silicon electrical coupling15 Sep 2026US 12,740,041 B2Lam Research Corporation
- Method for controlling dummy gate profile8 Oct 2026US 2026/0314291 A1Tokyo Electron Limited
- Method to improve interconnect coefficient of thermal expansion8 Oct 2026US 2026/0314357 A1APPLIED Materials.Inc.
- Processing solution, method for processing semiconductor substrate, and method for manufacturing semiconductor device1 Oct 2026US 2026/0297465 A1Tokyo Ohka Kogyo.Co., Ltd.
- Semiconductor device and method1 Oct 2026US 2026/0305219 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Processing method to dissipate fluid accumulation on a spinning wafer10 Sep 2026US 2026/0271653 A1Tokyo Electron Limited
Most cited
By later US patents
- Plasma treatment method and apparatus581US 5,242,539 AHitachi, Ltd. · 1993
- Selective formation of metallic films on metallic surfaces573US 8,956,971 B2ASM International N.V. · 2015
- Methods and apparatus for passivating a substrate in a plasma reactor567US 5,968,275 ALam Research Corporation · 1999
- Apparatus for efficient removal of halogen residues from etched substrates558US 8,293,016 B2APPLIED Materials.Inc. · 2012
- Post-deposition treatment to enhance properties of Si-O-C low k films526US 7,326,657 B2APPLIED Materials.Inc. · 2008