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US 2026/0314291 A1Published application
Method for controlling dummy gate profile
AssigneeTokyo Electron Limited
InventorMinjoon Park
Life of this patent
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Abstract
A method includes providing a substrate having a fin formed thereon, forming a dummy gate dielectric layer along sidewalls and a top surface of the fin, forming a dummy gate electrode layer over the dummy gate dielectric layer, and patterning the dummy gate electrode layer to form a dummy gate. A sidewall of the dummy gate includes a first residue. The method further includes amorphizing the first residue to form an amorphized first residue and selectively removing the amorphized first residue.
Claims20
A method comprising:
- providing a substrate having a fin formed thereon;
- forming a dummy gate dielectric layer along sidewalls and a top surface of the fin;
- forming a dummy gate electrode layer over the dummy gate dielectric layer;
- patterning the dummy gate electrode layer to form a dummy gate, a sidewall of the dummy gate comprising a first residue;
- amorphizing the first residue to form an amorphized first residue;
- and
- selectively removing the amorphized first residue.
4 more elements
A method comprising:
- providing a substrate having a fin extending from a major surface of the substrate;
- forming a dummy gate dielectric layer along sidewalls and a top surface of the fin;
- forming a dummy gate electrode layer over the dummy gate dielectric layer;
- patterning the dummy gate electrode layer to form one or more trenches in the dummy gate electrode layer, wherein the one or more trenches comprise one or more residues;
- performing a particle treatment on the one or more residues to form amorphized one or more residues;
- and
- selectively removing the amorphized one or more residues.
4 more elements
A method comprising:
- providing a substrate having a fin formed thereon;
- depositing a dielectric layer along sidewalls and a top surface of the fin;
- depositing a polysilicon layer over the dielectric layer;
- etching the polysilicon layer to form a dummy gate, a sidewall of the dummy gate comprising a first residue and a sidewall of the fin comprising a second residue;
- performing a particle treatment on the first residue and the second residue to form a modified first residue and a modified second residue, wherein the modified first residue and the modified second residue comprise amorphous silicon;
- and
- selectively etching the modified first residue and the modified second residue.
4 more elements
Dependencies are inferred from the claim text.