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AssigneeLam Research Corporation
InventorsChanghun Lee, Vikram Singh, Yun-Yen Jack Yang
Estimating the term…
A plasma processing system configured for use in processing a substrate after metal etching. The substrate includes a layer of photoresist disposed thereon. The plasma processing system includes a plasma generating region and a baffle plate disposed between the plasma generating region and the substrate. The baffle plate includes a central blocked portion disposed in a center region of the baffle plate. The baffle plate further includes an annular porous portion surrounding the central blocked portion. The annular porous portion includes a plurality of through holes configured for permitting a H.sub.2 O plasma generated in the plasma generating region to pass through the holes to reach a surface of the substrate. The plasma processing system also includes a chuck disposed below the baffle plate to support the substrate during the processing.
A baffle plate configured for use in a plasma processing chamber for processing a substrate, said substrate including a layer of photoresist disposed thereon, said baffle plate being disposed between a plasma generating region of said plasma processing chamber and said substrate, comprising:
In a plasma processing chamber, a method for passivating a substrate after etching, said substrate including a layer of photoresist disposed thereon, comprising:
A baffle plate configured for use in processing a substrate in a plasma processing chamber, said substrate including a layer of photoresist disposed thereon, said baffle plate being disposed between a plasma generating region of said plasma processing chamber and said substrate, comprising:
A plasma processing system configured for use in passivating a substrate, said substrate including a layer of photoresist disposed thereon, comprising:
Dependencies are inferred from the claim text.