H10P 50/262
By physical means only
Official title: {by physical means only}
H10P50/262 (By physical means only) appears on 249 US grants and 204 published applications in this corpus.
Search patents in H10P- Granted patents
- 249
- Published applications
- 204
- Assignees
- 118
- Inventors
- 563
- Latest grant
- 23 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 6 | 0 |
| 1978 | 7 | 0 |
| 1979 | 4 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 3 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 6 | 0 |
| 2001 | 3 | 0 |
| 2002 | 4 | 6 |
| 2003 | 5 | 4 |
| 2004 | 5 | 9 |
| 2005 | 5 | 5 |
| 2006 | 7 | 13 |
| 2007 | 3 | 2 |
| 2008 | 3 | 2 |
| 2009 | 5 | 4 |
| 2010 | 6 | 5 |
| 2011 | 3 | 3 |
| 2012 | 7 | 3 |
| 2013 | 3 | 3 |
| 2014 | 6 | 12 |
| 2015 | 12 | 16 |
| 2016 | 16 | 16 |
| 2017 | 16 | 13 |
| 2018 | 16 | 7 |
| 2019 | 10 | 12 |
| 2020 | 11 | 17 |
| 2021 | 8 | 17 |
| 2022 | 14 | 11 |
| 2023 | 10 | 8 |
| 2024 | 11 | 7 |
| 2025 | 8 | 6 |
| 2026 | 4 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Low resistance metal to semiconductor contacts for integrated NMOS and PMOS transistors23 Jun 2026US 12,666,688 B2Intel Corporation
- Low-stress passivation layer5 May 2026US 12,622,262 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Metal gates and manufacturing methods thereof28 Apr 2026US 12,615,837 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming mark on semiconductor device13 Jan 2026US 12,525,546 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Metal-insulator-metal structure and methods of fabrication thereof18 Nov 2025US 12,477,756 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing semiconductor device1 Oct 2026US 2026/0305267 A1Mitsubishi Electric Corporation
- Method of forming mark on semiconductor device9 Apr 2026US 2026/0101767 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Dummy components in integrated circuits1 Jan 2026US 2026/0005065 A1
- Apparatus and method of manufacturing a semiconductor device20 Nov 2025US 2025/0357091 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Metal encapsulation of etch mask via sputtering25 Sep 2025US 2025/0299945 A1Tokyo Electron Limited
Most cited
By later US patents
- Method of reducing residual contamination in singulated semiconductor die237US 10,026,605 B2Semiconductor Components Industries, LLC · 2018
- Precision spray processes for direct write electronic components212US 6,251,488 B1Optomec Design Company · 2001
- Selective sputtering for pattern transfer132US 9,493,879 B2APPLIED Materials.Inc. · 2016
- Laser beam processing method for a semiconductor wafer128US 7,265,033 B2Disco Corporation · 2007
- Selective metal etching in metal/polymer structures121US 4,684,437 AInternational Business Machines Corporation · 1987