Method of forming mark on semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLiang-Shiuan Peng, Chih-Hung Lu
Life of this patent
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Abstract
The present disclosure provides a method for manufacturing a semiconductor device having a mark. The method includes: providing a substrate including a device region and a peripheral region adjacent to the device region; forming an interconnect layer over the substrate; depositing a first dielectric layer on the interconnect layer; forming a redistribution layer (RDL) over the first dielectric layer in the device region; depositing a second dielectric layer on the RDL in the device region and the first dielectric layer in the device region and the peripheral region; and removing portions of the second dielectric layer, the first dielectric layer and the interconnect structure in the peripheral region to form the mark in the peripheral region.
Claims20
A method for manufacturing a semiconductor device having a mark, the method comprising:
- providing a substrate including a device region and a peripheral region adjacent to the device region;
- forming an interconnect layer over the substrate;
- depositing a first dielectric layer on the interconnect layer;
- forming a redistribution layer (RDL) over the first dielectric layer in the device region;
- depositing a second dielectric layer on the RDL in the device region and the first dielectric layer in the device region and the peripheral region;
- and
- removing portions of the second dielectric layer, the first dielectric layer and the interconnect structure in the peripheral region to form the mark in the peripheral region.
A method for manufacturing a semiconductor device having a mark, the method comprising:
- providing a substrate defined with a device region and a peripheral region adjacent to the device region;
- forming an interconnect layer over the substrate;
- depositing a first dielectric layer on the interconnect structure;
- forming a photoresist pattern on the first dielectric layer, wherein the first dielectric layer in the peripheral region is at least partially exposed through the photoresist pattern;
- disposing a conductive material on the first dielectric layer exposed through the photoresist pattern to form a conductive feature over the first dielectric layer;
- removing the photoresist pattern;
- conformally forming a second dielectric layer on the conductive feature and the first dielectric layer exposed through the conductive feature;
- and
- engraving portions of the conductive feature and the second dielectric layer in the peripheral region to form the mark in the peripheral region.
A method for manufacturing a semiconductor device having a mark, the method comprising:
- providing a substrate defined with a device region and a peripheral region adjacent to the device region;
- forming an interconnect layer over the substrate;
- depositing a first dielectric layer on the interconnect layer;
- forming a first photoresist pattern on the first dielectric layer in the device region and a second photoresist pattern on the first dielectric layer in the peripheral region;
- filling a conductive material into openings of the first and second photoresist patterns to form a first conductive pattern in the device region and a second conductive pattern in the peripheral region;
- removing the first photoresist pattern and the second photoresist pattern;
- conformally forming a second dielectric layer on the first conductive pattern, the second conductive pattern and the first dielectric layer;
- and
- engraving portions of the second dielectric layer and the second conductive pattern by laser.
Dependencies are inferred from the claim text.