Method of forming mark on semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLIANG-SHIUAN PENG, CHIH-HUNG LU
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Abstract
The present disclosure provides a method for manufacturing a semiconductor device having a mark. The method includes: providing a substrate including a device region and a peripheral region adjacent to the device region; forming an interconnect layer over the substrate; depositing a first dielectric layer on the interconnect layer; forming a redistribution layer (RDL) over the first dielectric layer in the device region; depositing a second dielectric layer on the RDL in the device region and the first dielectric layer in the device region and the peripheral region; and removing portions of the second dielectric layer, the first dielectric layer and the interconnect structure in the peripheral region to form the mark in the peripheral region.
Claims20
A method for manufacturing a semiconductor device having a mark, the method comprising:
- providing a substrate;
- depositing a first dielectric layer over the substrate;
- depositing a second dielectric layer on the first dielectric layer;
- and
- removing portions of the second dielectric layer and the first dielectric layer to form the mark.
A method for manufacturing a semiconductor device having a mark, the method comprising:
- providing a substrate defined with a first region and a second region adjacent to the first region;
- depositing a first dielectric layer over the substrate in the first and second regions;
- forming a conductive feature over the first dielectric layer in the first region;
- depositing a second dielectric layer on the conductive feature within the first region and on the first dielectric layer within the second region;
- and
- engraving portions of the first dielectric layer and the second dielectric layer in the second region to form the mark in the second region.
A method for manufacturing a semiconductor device having a mark, the method comprising:
- depositing a first dielectric layer over a substrate;
- forming a conductive feature over the first dielectric layer;
- depositing a second dielectric layer over the conductive feature;
- and
- engraving portions of the second dielectric layer and the conductive feature to form the mark,
- wherein the conductive feature is between the first dielectric layer and the second dielectric layer prior to the engraving.
Dependencies are inferred from the claim text.