H10P 50/263
Of silicon-containing layers
Official title: {of silicon-containing layers}
H10P50/263 (Of silicon-containing layers) appears on 52 US grants and 39 published applications in this corpus.
Search patents in H10P- Granted patents
- 52
- Published applications
- 39
- Assignees
- 35
- Inventors
- 121
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 3 | 0 |
| 1978 | 6 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 2 |
| 2003 | 1 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 1 | 3 |
| 2007 | 1 | 0 |
| 2008 | 1 | 0 |
| 2009 | 0 | 0 |
| 2010 | 1 | 2 |
| 2011 | 1 | 1 |
| 2012 | 2 | 0 |
| 2013 | 0 | 1 |
| 2014 | 2 | 2 |
| 2015 | 1 | 5 |
| 2016 | 5 | 2 |
| 2017 | 1 | 4 |
| 2018 | 6 | 4 |
| 2019 | 4 | 2 |
| 2020 | 1 | 3 |
| 2021 | 1 | 1 |
| 2022 | 3 | 4 |
| 2023 | 2 | 1 |
| 2024 | 2 | 1 |
| 2025 | 0 | 0 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Metal gates and manufacturing methods thereof28 Apr 2026US 12,615,837 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and a manufacturing method thereof10 Dec 2024US 12,166,133 B2Changxin Memory Technologies, Inc.
- Gate structure of a semiconductor device and method of forming same26 Nov 2024US 12,154,831 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Gate structure of a semiconductor device and method of forming same27 Jun 2023US 11,688,648 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Flowable film formation and treatments28 Mar 2023US 11,615,966 B2APPLIED Materials.Inc.
- Dummy components in integrated circuits1 Jan 2026US 2026/0005065 A1
- Gate Structure of a Semiconductor Device and Method of Forming Same21 Nov 2024US 2024/0387294 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Gate Structure of a Semiconductor Device and Method of Forming Same5 Oct 2023US 2023/0317525 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Metal Gates And Manufacturing Methods Thereof27 Oct 2022US 2022/0344489 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Gate Structure of a Semiconductor Device and Method of Forming Same26 May 2022US 2022/0165624 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of manufacturing submicron channel transistors39US 4,312,680 ARCA Corporation · 1982
- System and method for improving thin films by gas cluster ion beam processing31US 6,537,606 B2Epion Corporation · 2003
- Insulated gate type field effect transistors29US 4,074,300 ANippon Telegraph & Telephone Public Corporation · 1978
- Process for fabricating narrow polycrystalline silicon members23US 4,026,740 AIntel Corporation · 1977
- Method of forming sloped members of N-type polycrystalline silicon21US 4,057,895 AGeneral Electric Company · 1977