Semiconductor structure and a manufacturing method thereof

A manufacturing method of a semiconductor structure, comprising:

• providing a substrate;
• sequentially forming on the substrate an initial first conductive layer, an initial barrier layer and an initial second conductive layer, which in turn constitute an initial gate structure;
• wherein the initial first conductive layer comprises at least two initial first polysilicon layers, at least one initial metal layer, with a bottom layer of the at least two initial first polysilicon layers located adjacent to the substrate and a top layer of the at least two initial second polysilicon layers located contiguous to the initial barrier layer;
• and wherein adjacent initial polysilicon layers are provided with one initial metal layer;
• forming a patterned mask layer on the initial gate structure;
• and
• etching the initial first conductive layer, the initial barrier layer and the initial second conductive layer with the patterned mask layer as a mask to form a first conductive layer, a barrier layer and a second conductive layer;
• wherein the first conductive layer, the barrier layer and the second conductive layer constitute a gate structure;
• and the first conductive layer comprises at least two polysilicon layers, and at least one metal layer;
• the first conductive layer has a total thickness of 23 nm to 50 nm;
• each polysilicon layer has a same thickness and has a thickness of 9 nm to 15 nm, and each metal layer has a same thickness, and a thickness of each metal layer is from 0.5 nm to 1.5 nm.