Laser beam processing method for a semiconductor wafer
AssigneeDisco Corporation
InventorsKoichi Shigematsu, Naoki Ohmiya, Toshiyuki Yoshikawa
Life of this patent
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Abstract
A laser beam processing method for a semiconductor wafer having a low-dielectric insulating film formed on the front surface of a semiconductor substrate thereof, a plurality of circuits sectioned by streets into a lattice pattern, and metal patterns for testing formed partially on each street. The method includes a laser beam processing step for applying a laser beam to the positions of areas at which the metal patterns are located, and to the low-dielectric insulating film, under different processing conditions so as to remove the metal patterns and the low-dielectric insulating film without damaging the substrate and its circuits.
Claims2
A laser beam processing method for a semiconductor wafer having a semiconductor substrate, a low-dielectric insulating film formed on the front surface of the semiconductor substrate, a plurality of circuits sectioned by streets into a lattice pattern, and metal patterns for testing formed partially in areas on each street, said method comprising:
- a street detecting step for detecting the position of each said areas by taking an image of each street;
- and
- a laser beam processing step for applying a laser beam to the positions of detected areas at which the metal patterns are located, under first processing conditions, and to the low-dielectric insulating film under second processing conditions different from the first processing conditions to remove the metal patterns and the low-dielectric insulating film, the processing conditions including the output of the laser beam and the processing-feed rate of the semiconductor wafer.
Dependencies are inferred from the claim text.