H10P 32/10
Diffusion of dopants within, into or out of semiconductor bodies or layers
H10P32/10 (Diffusion of dopants within, into or out of semiconductor bodies or layers) appears on 4,049 US grants and 3,528 published applications in this corpus.
Search patents in H10P- Granted patents
- 4,049
- Published applications
- 3,528
- Assignees
- 876
- Inventors
- 6,515
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 34 | 0 |
| 1977 | 44 | 0 |
| 1978 | 31 | 0 |
| 1979 | 34 | 0 |
| 1980 | 30 | 0 |
| 1981 | 25 | 0 |
| 1982 | 17 | 0 |
| 1983 | 33 | 0 |
| 1984 | 24 | 0 |
| 1985 | 34 | 0 |
| 1986 | 35 | 0 |
| 1987 | 28 | 0 |
| 1988 | 44 | 0 |
| 1989 | 41 | 0 |
| 1990 | 38 | 0 |
| 1991 | 41 | 0 |
| 1992 | 32 | 0 |
| 1993 | 46 | 0 |
| 1994 | 49 | 0 |
| 1995 | 32 | 0 |
| 1996 | 38 | 0 |
| 1997 | 40 | 0 |
| 1998 | 39 | 0 |
| 1999 | 80 | 0 |
| 2000 | 87 | 0 |
| 2001 | 80 | 23 |
| 2002 | 69 | 67 |
| 2003 | 75 | 62 |
| 2004 | 48 | 69 |
| 2005 | 43 | 65 |
| 2006 | 43 | 54 |
| 2007 | 45 | 65 |
| 2008 | 34 | 91 |
| 2009 | 46 | 76 |
| 2010 | 68 | 90 |
| 2011 | 77 | 144 |
| 2012 | 79 | 123 |
| 2013 | 106 | 158 |
| 2014 | 128 | 173 |
| 2015 | 184 | 268 |
| 2016 | 246 | 284 |
| 2017 | 289 | 293 |
| 2018 | 250 | 253 |
| 2019 | 249 | 246 |
| 2020 | 246 | 225 |
| 2021 | 175 | 174 |
| 2022 | 138 | 144 |
| 2023 | 122 | 111 |
| 2024 | 107 | 126 |
| 2025 | 79 | 97 |
| 2026 | 47 | 47 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10P 32/17Characterised by the semiconductor material3,278
- H10P 32/14Within a single semiconductor body or layer in a solid phase2,847
- H10P 32/12Between a solid phase and a gaseous phase934
- H10P 32/19Diffusion sources193
- H10P 32/18Diffusion lifetime killers142
- H10P 32/15From the substrate during epitaxy113
- H10P 32/16Between a solid phase and a liquid phase112
- H10P 32/185Lithium-drift diffusion2
Recent patents
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- Radiation hardened (rad-hard) devices including superlattice to control boron doping profile and related methods24 Sep 2026US 2026/0293251 A1Atomera Incorporated
- Semiconductor device and method for manufacturing semiconductor device17 Sep 2026US 2026/0282418 A1Mitsubishi Electric Corporation
- Semiconductor device and method for manufacturing same17 Sep 2026US 2026/0282477 A1Kabushiki Kaisha Toshiba
- Incorporation Of Arsenic Dopant In Semiconductor Lattice3 Sep 2026US 2026/0262454 A1UCL Business PLC
Most cited
By later US patents
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Conformal doping via plasma activated atomic layer deposition and conformal film deposition594US 8,956,983 B2Novellus Systems, Inc. · 2015
- Low temperature CVD process with selected stress of the CVD layer on CMOS devices559US 7,393,765 B2APPLIED Materials.Inc. · 2008
- Method of doping semiconductors546US 8,071,451 B2Axcelis Technologies, Inc. · 2011
- Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs539US 7,238,596 B2Arizona Board of Regenta, a body corporate of the State of Arizona acting for and on behalf of Arizona State University · 2007