H10P 32/00
Diffusion of dopants within, into or out of wafers, substrates or parts
Official title: Diffusion of dopants within, into or out of wafers, substrates or parts of devices (during formation of materials H10P14/00)
H10P32/00 (Diffusion of dopants within, into or out of wafers, substrates or parts) appears on 5,284 US grants and 4,741 published applications in this corpus.
Search patents in H10P- Granted patents
- 5,284
- Published applications
- 4,741
- Assignees
- 982
- Inventors
- 8,419
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 40 | 0 |
| 1977 | 54 | 0 |
| 1978 | 38 | 0 |
| 1979 | 45 | 0 |
| 1980 | 43 | 0 |
| 1981 | 39 | 0 |
| 1982 | 23 | 0 |
| 1983 | 40 | 0 |
| 1984 | 34 | 0 |
| 1985 | 47 | 0 |
| 1986 | 44 | 0 |
| 1987 | 40 | 0 |
| 1988 | 57 | 0 |
| 1989 | 45 | 0 |
| 1990 | 46 | 0 |
| 1991 | 49 | 0 |
| 1992 | 39 | 0 |
| 1993 | 58 | 0 |
| 1994 | 63 | 0 |
| 1995 | 39 | 0 |
| 1996 | 42 | 0 |
| 1997 | 46 | 0 |
| 1998 | 44 | 0 |
| 1999 | 88 | 0 |
| 2000 | 100 | 0 |
| 2001 | 95 | 27 |
| 2002 | 83 | 83 |
| 2003 | 86 | 77 |
| 2004 | 67 | 93 |
| 2005 | 57 | 86 |
| 2006 | 57 | 82 |
| 2007 | 57 | 89 |
| 2008 | 52 | 117 |
| 2009 | 58 | 104 |
| 2010 | 89 | 116 |
| 2011 | 98 | 170 |
| 2012 | 98 | 146 |
| 2013 | 144 | 213 |
| 2014 | 177 | 225 |
| 2015 | 243 | 329 |
| 2016 | 301 | 342 |
| 2017 | 351 | 354 |
| 2018 | 313 | 324 |
| 2019 | 311 | 341 |
| 2020 | 331 | 329 |
| 2021 | 243 | 244 |
| 2022 | 206 | 236 |
| 2023 | 179 | 186 |
| 2024 | 173 | 200 |
| 2025 | 144 | 159 |
| 2026 | 68 | 69 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device with metal silicide layer and method for manufacturing the same29 Sep 2026US 12,751,059 B2Kabushiki Kaisha Toshiba
- Volumeless threshold voltage tuning for stacked device structures15 Sep 2026US 12,740,133 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Thin bidirectional bipolar junction transistor devices from bonded wide and thick wafers15 Sep 2026US 12,740,135 B2Ideal Power Inc.
- Method of manufacturing semiconductor device8 Sep 2026US 12,733,417 B2Renesas Electronics Corporation
- Method of manufacturing semiconductor device1 Sep 2026US 12,727,183 B2Renesas Electronics Corporation
- Controlled doping in a gate dielectric layer8 Oct 2026US 2026/0313932 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Volumeless Threshold Voltage Tuning for Stacked Device Structures8 Oct 2026US 2026/0314031 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Image sensing device and methods of manufacturing the same8 Oct 2026US 2026/0314089 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Conversion of metal/metal oxide materials to semiconducting transition metal dichalcogenide materials in gate-all-around (gaa) transistor devices1 Oct 2026US 2026/0304818 A1Intel Corporation
- Self-forming barrier for use in air gap formation1 Oct 2026US 2026/0305282 A1Adeia Semiconductor Solutions LLC
Most cited
By later US patents
- Method of fabricating oxide semiconductor device3,948US 7,468,304 B2Canon Kabushiki Kaisha · 2008
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Conformal doping via plasma activated atomic layer deposition and conformal film deposition594US 8,956,983 B2Novellus Systems, Inc. · 2015
- Low temperature CVD process with selected stress of the CVD layer on CMOS devices559US 7,393,765 B2APPLIED Materials.Inc. · 2008
- Metal silicide, metal germanide, methods for making the same559US 9,129,897 B2ASM International N.V. · 2015