H10P 32/20
Diffusion for doping of insulating layers
H10P32/20 (Diffusion for doping of insulating layers) appears on 502 US grants and 577 published applications in this corpus.
Search patents in H10P- Granted patents
- 502
- Published applications
- 577
- Assignees
- 140
- Inventors
- 1,082
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 4 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 10 | 4 |
| 2002 | 9 | 12 |
| 2003 | 5 | 6 |
| 2004 | 12 | 13 |
| 2005 | 5 | 16 |
| 2006 | 8 | 15 |
| 2007 | 7 | 10 |
| 2008 | 9 | 10 |
| 2009 | 4 | 15 |
| 2010 | 11 | 12 |
| 2011 | 13 | 5 |
| 2012 | 8 | 3 |
| 2013 | 6 | 15 |
| 2014 | 12 | 12 |
| 2015 | 14 | 16 |
| 2016 | 22 | 27 |
| 2017 | 28 | 37 |
| 2018 | 37 | 33 |
| 2019 | 23 | 41 |
| 2020 | 41 | 52 |
| 2021 | 33 | 40 |
| 2022 | 41 | 42 |
| 2023 | 27 | 45 |
| 2024 | 40 | 44 |
| 2025 | 36 | 38 |
| 2026 | 16 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Volumeless threshold voltage tuning for stacked device structures15 Sep 2026US 12,740,133 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Controlled doping in a gate dielectric layer1 Sep 2026US 12,727,186 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods for patterning substrates to adjust voltage properties18 Aug 2026US 12,713,851 B2APPLIED Materials.Inc.
- Substrate processing method and substrate processing apparatus for controlling introduction into insulating film16 Jun 2026US 12,660,529 B2Tokyo Electron Limited
- Method of manufacturing semiconductor device2 Jun 2026US 12,648,413 B2Winbond Electronics Corp.
- Controlled doping in a gate dielectric layer8 Oct 2026US 2026/0313932 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Volumeless Threshold Voltage Tuning for Stacked Device Structures8 Oct 2026US 2026/0314031 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Self-forming barrier for use in air gap formation1 Oct 2026US 2026/0305282 A1Adeia Semiconductor Solutions LLC
- Silicon insulation film forming method10 Sep 2026US 2026/0271638 A1Jusung Engineering Co., Ltd.
- Manufacturing Method Of Semiconductor Device13 Aug 2026US 2026/0239937 A1Semiconductor Energy Laboratory Co.Ltd.
Most cited
By later US patents
- Method of fabricating oxide semiconductor device3,948US 7,468,304 B2Canon Kabushiki Kaisha · 2008
- Elimination of flow and pressure gradients in low utilization processes385US 7,955,646 B2APPLIED Materials.Inc. · 2011
- Self-forming barrier for use in air gap formation320US 10,229,851 B2International Business Machines Corporation · 2019
- Anisotropic gap etch129US 9,502,258 B2APPLIED Materials.Inc. · 2016
- Atomic layer deposited lanthanide doped TiOx dielectric films119US 7,084,078 B2Micron Technology, Inc. · 2006