Atomic layer deposited lanthanide doped TiOx dielectric films

A method of forming a dielectric film comprising:

• forming a layer of lanthanide doped titanium oxide by atomic layer deposition including:
• pulsing a titanium containing precursor into a reaction chamber containing a substrate;
• pulsing an oxygen containing precursor into the reaction chamber;
• repeating for a plurality of cycles the pulsing of the titanium containing precursor and the pulsing of the oxygen containing precursor;
• substituting a dopant cycle for one or more cycles of the pulsing of the titanium containing precursor and the pulsing of the oxygen containing precursor after performing two cycles of the pulsing of the titanium containing precursor and the pulsing of the oxygen containing precursor, the dopant cycle including:
• pulsing a lanthanide containing precursor into the reaction chamber;
• and
• pulsing a reactant precursor into the reaction chamber, the reactant precursor selected to produce an oxidizing reaction for the lanthanide at the substrate to form titanium oxide doped with the lanthanide.

A method of forming a dielectric film comprising:

• forming a layer of lanthanide doped titanium oxide by atomic layer deposition including:
• pulsing a titanium containing precursor into a reaction chamber containing a substrate;
• pulsing a lanthanide containing precursor into the reaction chamber substantially simultaneously with the pulsing of the titanium containing precursor;
• and
• pulsing a reactant precursor into the reaction chamber, the reactant precursor providing an oxidizing reaction at the substrate to form titanium oxide doped with the lanthanide.

A method of forming a capacitor, comprising:

• forming a first conductive layer on a substrate;
• forming a dielectric film containing lanthanide doped TiOx on the first conductive layer;
• and
• forming a second conductive layer on the dielectric film, wherein forming the dielectric film containing lanthanide doped TiOx includes:
• depositing titanium and oxygen onto the first conductive layer by performing a plurality of atomic layer deposition cycles;
• and
• depositing a lanthanide dopant by atomic layer deposition onto the first conductive layer after depositing the titanium and oxygen to form a layer of lanthanide doped TiOx.

A method of forming a transistor comprising:

• forming a source region and a drain region in a substrate;
• forming a body region between the source and drain regions;
• forming a dielectric film containing lanthanide doped TiOx on the body region between the source and drain regions;
• and
• coupling a gate to the dielectric film, wherein forming the dielectric film containing lanthanide doped TiOx includes:
• depositing titanium and oxygen onto the body region by conducting a plurality of atomic layer deposition cycles;
• and
• depositing a lanthanide dopant by atomic layer deposition onto the body region after depositing the titanium and oxygen to form a layer of lanthanide doped TiOx.

A method of forming a memory comprising:

• forming a number of access transistors, at least one of the access transistors including a dielectric film containing lanthanide doped TiOx on a body region between a source region and a drain region, the dielectric film containing lanthanide doped TiOx formed by a method including:
• depositing titanium and oxygen onto the body region by conducting a plurality of atomic layer deposition cycles;
• and
• depositing a lanthanide dopant by atomic layer deposition onto the body region after depositing the titanium and oxygen to form a layer of lanthanide doped TiOx;
• forming a number of word lines coupled to a number of the gates of the number of access transistors;
• forming a number of source lines coupled to a number of the source regions of the number of access transistors;
• and
• forming a number of bit lines coupled to a number of the drain regions of the number of access transistors.

A method of forming an electronic system comprising:

• providing a processor;
• coupling a memory array to the processor, wherein the memory array includes at least one access transistor having a dielectric film containing lanthanide doped TiOx on a body region between a source region and a drain region, wherein forming the dielectric film containing lanthanide doped TiOx includes:
• depositing titanium and oxygen onto the body region by conducting a plurality of atomic layer deposition cycles;
• and
• depositing a lanthanide dopant by atomic layer deposition onto the body region after depositing the titanium and oxygen to form a layer of lanthanide doped TiOx.