Methods for patterning substrates to adjust voltage properties

A method of forming a structure on a substrate, the method comprising:

• depositing a dipole dopant containing layer comprising a dipole dopant on a first region and a second region of a dielectric layer formed on the substrate;
• depositing a hardmask over the dipole dopant containing layer deposited on the first and the second regions;
• forming a patterned photoresist layer over the hardmask, wherein the patterned photoresist layer comprises a first portion that is positioned over the first region and an opening in the patterned photoresist layer that is positioned to expose a portion of the hardmask that is disposed over the second region of the substrate;
• exposing the substrate to an etchant to etch the hardmask and dipole dopant containing layer within the second region and expose at least a portion of the dielectric layer within the second region;
• removing the patterned photoresist layer from the substrate;
• and
• annealing the substrate to diffuse the dipole dopant into a portion of the dielectric layer disposed in the first region.