Semiconductor device and method for manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorYoshitaka KAMO
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Abstract
It is difficult to stably manufacture a conventional GaN-based HEMT which has an AlN spacer layer below the source and drain electrodes to reduce access resistance and does not have the AlN spacer layer directly below the gate electrode to reduce gate leakage current. A method for manufacturing a semiconductor device according to the present disclosure having a GaN-based HEMT includes: forming a metal film (21) on an epitaxial wafer (10); forming an opening portion (31) in the metal film (21) corresponding to a position where a gate electrode (18) is formed; and irradiating the opening portion (31) with a laser (90) to anneal the spacer layer (13) and the channel layer (12).
Claims6
A method for manufacturing a semiconductor device having a GaN-based HEMT comprising:
- forming an epitaxial wafer including a channel layer and a spacer layer formed in contact with the channel layer;
- forming a metal film on the epitaxial wafer;
- forming an opening portion in the metal film;
- irradiating the opening portion with a laser to anneal the spacer layer and the channel layer;
- and
- forming a gate electrode in the opening portion.
A semiconductor device having a GaN-based HEMT comprising:
- an epitaxial wafer having a channel layer formed on a substrate and a spacer layer formed on the channel layer and containing Al;
- and
- a gate electrode formed on the epitaxial wafer,
- wherein the channel layer below the gate electrode contains the Al diffused from the spacer layer, and
- the channel layer other than below the gate electrode does not contain the Al diffused from the spacer layer.
Dependencies are inferred from the claim text.