US 2026/0282477 A1 · SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Abstract

A semiconductor device includes a first electrode, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer and a second electrode. The first semiconductor layer is connected to the first electrode. The second semiconductor layer contacts the first semiconductor layer. An impurity concentration of the second semiconductor layer is less than it of the first semiconductor layer. A defect density of the second semiconductor layer is greater than it of the first semiconductor layer. The third semiconductor layer contacts the second semiconductor layer. An impurity concentration of the third semiconductor layer is less than it of the second semiconductor layer. A defect density of the third semiconductor layer is less than it of the second semiconductor layer. The fourth semiconductor layer contacts the third semiconductor layer. The second electrode is connected to the fourth semiconductor layer.

Claims11

Dependent claims

A semiconductor device, comprising:

a first electrode;
a first semiconductor layer connected to the first electrode, the first semiconductor layer being of a first conductivity type;
a second semiconductor layer contacting the first semiconductor layer, the second semiconductor layer being of the first conductivity type, an impurity concentration of the second semiconductor layer being less than an impurity concentration of the first semiconductor layer, a defect density of the second semiconductor layer being greater than a defect density of the first semiconductor layer;
a third semiconductor layer contacting the second semiconductor layer, the third semiconductor layer being of the first conductivity type, an impurity concentration of the third semiconductor layer being less than the impurity concentration of the second semiconductor layer, a defect density of the third semiconductor layer being less than a defect density of the second semiconductor layer;
a fourth semiconductor layer contacting the third semiconductor layer, the fourth semiconductor layer being of a second conductivity type;
and
a second electrode connected to the fourth semiconductor layer.

4 more elements

A method for manufacturing a semiconductor device, the method comprising:

implanting a first impurity into a first surface of a second semiconductor layer of an intermediate structure body to cause the second semiconductor layer to be of a first conductivity type, the intermediate structure body including
the second semiconductor layer of the first conductivity type,
a third semiconductor layer contacting the second semiconductor layer, the third semiconductor layer being of the first conductivity type, an impurity concentration of the third semiconductor layer being less than an impurity concentration of the second semiconductor layer,
a fourth semiconductor layer contacting the third semiconductor layer, the fourth semiconductor layer being of a second conductivity type, and
a second electrode connected to the fourth semiconductor layer, the first surface being at a side of the second semiconductor layer opposite to the third semiconductor layer;
activating the first impurity in the second semiconductor layer by heating the intermediate structure body from the first surface side so that the first impurity in the second semiconductor layer is activated in a thinner part of the second semiconductor layer than a part of the second semiconductor layer into which the first impurity was implanted;
and
forming a first electrode connected to the first surface.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method for manufacturing same

Life of this patent

Semiconductor device and method for manufacturing same

Life of this patent

Abstract

Claims11