Large-area wafer-scale CMOS-compatible 2D-material intercalation doping tools, processes, and methods, including doping of synthesized graphene

A method of accelerated intercalation doping by insertion of dopant atoms, ions, or molecules into layered 2D materials, said method comprising:

• loading single or multiple wafers or substrates into a reactor chamber, wherein the single or multiple wafers or substrates comprise a diameter or side distance in the range of 25 mm to 450 mm, wherein the single or multiple wafers or substrates comprise multi-layer graphene strips, wherein the multi-layer graphene strips comprise exposed layer edges, wherein the multi-layer graphene strips each comprise two or more graphene layers, wherein each of the graphene layers consists of a single layer of atoms;
• heating the single or multiple wafers or substrates to a temperature of 25° C. to 500° C.;
• creating pressure on the single or multiple wafers or substrates in the range of 2 bar to 500 bar;
• and
• introducing intercalation doping agents into the reactor chamber to insert the intercalation dopants between the two or more graphene layers via the exposed layer edges.