H10P 32/15
From the substrate during epitaxy
Official title: {from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping}
H10P32/15 (From the substrate during epitaxy) appears on 113 US grants and 76 published applications in this corpus.
Search patents in H10P- Granted patents
- 113
- Published applications
- 76
- Assignees
- 78
- Inventors
- 261
- Latest grant
- 11 Mar 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 3 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 4 | 0 |
| 1984 | 1 | 0 |
| 1985 | 4 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 3 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 4 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 0 | 0 |
| 2001 | 3 | 1 |
| 2002 | 4 | 4 |
| 2003 | 6 | 5 |
| 2004 | 4 | 6 |
| 2005 | 3 | 5 |
| 2006 | 2 | 4 |
| 2007 | 3 | 4 |
| 2008 | 2 | 3 |
| 2009 | 4 | 6 |
| 2010 | 1 | 2 |
| 2011 | 1 | 2 |
| 2012 | 3 | 0 |
| 2013 | 0 | 2 |
| 2014 | 2 | 4 |
| 2015 | 8 | 7 |
| 2016 | 6 | 2 |
| 2017 | 0 | 1 |
| 2018 | 2 | 6 |
| 2019 | 6 | 4 |
| 2020 | 5 | 2 |
| 2021 | 0 | 0 |
| 2022 | 2 | 3 |
| 2023 | 2 | 1 |
| 2024 | 0 | 1 |
| 2025 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Arsenic diffusion profile engineering for transistors11 Mar 2025US 12,249,626 B2APPLIED Materials.Inc.
- Bipolar transistor and manufacturing method24 Oct 2023US 11,798,937 B2STMicroelectronics (Crolles 2) SAS
- Wafer evaluation method26 Sep 2023US 11,769,697 B2SK Siltron Co., Ltd.
- Solar cell and solar cell module26 Jul 2022US 11,398,574 B2Panasonic Holdings Corporation
- Virtual wafer techniques for fabricating semiconductor devices5 Apr 2022US 11,295,949 B2Vishay-Siliconix
- Arsenic diffusion profile engineering for transistors12 Jun 2025US 2025/0194193 A1APPLIED Materials.Inc.
- Epitaxy fast ramp temperature control systems and processes5 Dec 2024US 2024/0404891 A1ASM IP Holding B. V.
- High-voltage isolation semiconductor device and method of making the same23 Mar 2023US 2023/0085878 A1Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Arsenic diffusion profile engineering for transistors6 Oct 2022US 2022/0320294 A1APPLIED Materials.Inc.
- Wafer evaluation method12 May 2022US 2022/0148925 A1SK Siltron Co., Ltd.
Most cited
By later US patents
- Carbon doped epitaxial layer for high speed CB-CMOS117US 6,576,535 B2Texas Instruments Incorporated · 2003
- Electrooptic device, driving substrate for electrooptic device, and method of manufacturing the device and substrate97US 6,372,558 B1Sony Corporation · 2002
- Fabrication of gallium arsenide-germanium heteroface junction device73US 4,400,221 AThe United States of America as represented by the Secretary of the Air Force · 1983
- Process for making thin film silicon-on-insulator wafers employing wafer bonding and wafer thinning60US 5,213,986 ANorth American Philips Corporation · 1993
- Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor39US 4,925,809 AKyushu Electronic Metal Co., Ltd. · 1990