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US 11,798,937 B2Granted
Bipolar transistor and manufacturing method
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsEdoardo Brezza, Alexis Gauthier
Life of this patent
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Abstract
A bipolar transistor includes a collector region having a first doped portion located in a substrate and a second doped portion covering and in contact with an area of the first doped portion. The collector region has a doping profile having a peak in the first portion and a decrease from this peak up to in the second portion.
Claims40
A method for manufacturing at least one bipolar transistor within an integrated circuit, comprising:
- producing a collector region by implanting dopants within a semiconductor substrate so as to form a first doped portion of the collector region and forming a second doped portion of the collector region covering and in contact with an area of the first doped portion;
- wherein forming the second doped portion comprises:
- epitaxial growing a non-doped semiconductor material from the surface of said area;
- and
- diffusing dopants in the epitaxiated material from the first doped portion;
- wherein said diffusing is activated at least by said epitaxial growing;
- and
- controlling said diffusing of dopants;
- wherein the second doped portion of the collector region is in contact with a base region of the transistor;
- wherein epitaxial growing of the non-doped material comprises stopping epitaxial growing at a distance from the base region;
- and
- wherein controlling comprises continuing epitaxial growing with an in situ doping of carbon in the non-doped material so as to form an upper layer of the semiconductor material in said second doped portion containing carbon in contact with the base region.
9 more elements
A method for manufacturing at least one bipolar transistor within an integrated circuit, comprising:
- producing a collector region by implanting dopants within a semiconductor substrate so as to form a first doped portion of the collector region and forming a second doped portion of the collector region covering and in contact with an area of the first doped portion;
- wherein forming the second doped portion comprises:
- epitaxial growing a non-doped semiconductor material from the surface of said area;
- and
- diffusing dopants in the epitaxiated material from the first doped portion;
- wherein said diffusing is activated at least by said epitaxial growing;
- and
- controlling said diffusing of dopants by:
- adjusting a dose of dopants implanted in said area;
- implanting carbon ions in the substrate so as to include carbon in said first doped portion;
- and
- adjusting a carbon dose implanted in said area relative to adjusting the dose of dopants implanted in said area.
9 more elements
A method for manufacturing at least one bipolar transistor within an integrated circuit, comprising:
- producing a collector region by implanting dopants within a semiconductor substrate so as to form a first doped portion of the collector region and forming a second doped portion of the collector region covering and in contact with an area of the first doped portion;
- wherein forming the second doped portion comprises:
- epitaxial growing a non-doped semiconductor material from the surface of said area;
- and
- diffusing dopants in the epitaxiated material from the first doped portion;
- wherein said diffusing is activated at least by said epitaxial growing;
- and
- controlling said diffusing of dopants by:
- adjusting a dose of dopants implanted in said area;
- implanting carbon ions in the substrate so as to include carbon in said first doped portion;
- and
- adjusting a depth of a quantity peak of carbon implanted in said area relative to adjusting the dose of dopants implanted in said area.
9 more elements
A method for manufacturing at least one bipolar transistor within an integrated circuit, comprising:
- producing a collector region by implanting dopants within a semiconductor substrate so as to form a first doped portion of the collector region and forming a second doped portion of the collector region covering and in contact with an area of the first doped portion;
- wherein forming the second doped portion comprises:
- epitaxial growing a non-doped semiconductor material from the surface of said area;
- and
- diffusing dopants in the epitaxiated material from the first doped portion;
- wherein said diffusing is activated at least by said epitaxial growing;
- and
- controlling said diffusing of dopants by adjusting a depth of a quantity peak of dopants implanted in said area.
5 more elements
An integrated circuit, comprising:
- a substrate;
- and
- at least one bipolar transistor including:
- a collector region including a first doped portion located in the substrate and a second doped portion covering and in contact with an area of the first doped portion;
- wherein the collector region has a doping profile with a peak in concentration in the first doped portion and a decrease in concentration from this peak up to in the second doped portion;
- and
- wherein the doping profile is devoid of a plateau in the second doped portion.
4 more elements
An integrated circuit, comprising:
- a substrate;
- and
- at least one bipolar transistor including:
- a collector region including a first doped portion located in the substrate and a second doped portion covering and in contact with an area of the first doped portion;
- wherein the collector region has a doping profile with a peak in concentration in the first doped portion and a decrease in concentration from this peak up to in the second doped portion;
- and
- wherein the second doped portion comprises, in the vicinity of an end of the second doped portion furthest away from the first doped portion, a layer of semiconductor material containing carbon.
4 more elements
An integrated circuit, comprising:
- a substrate;
- and
- at least one bipolar transistor including:
- a collector region including a first doped portion located in the substrate and a second doped portion covering and in contact with an area of the first doped portion;
- wherein the collector region has a doping profile with a peak in concentration in the first doped portion and a decrease in concentration from this peak up to in the second doped portion;
- and
- wherein the collector region further comprises carbon;
- wherein a concentration peak of the carbon is at a first depth from a front face of the substrate, and wherein a concentration peak of the dopant is at a second depth from the front face of the substrate, wherein the second depth is deeper than the first depth.
5 more elements
An integrated circuit, comprising:
- a substrate;
- and
- at least one bipolar transistor including:
- a collector region including a first doped portion located in the substrate and a second doped portion covering and in contact with an area of the first doped portion;
- wherein the collector region has a doping profile with a peak in concentration in the first doped portion and a decrease in concentration from this peak up to in the second doped portion;
- wherein said at least one bipolar transistor comprises a first bipolar transistor and a second bipolar transistor, wherein the first and second bipolar transistors are located in different places of the substrate, and wherein the first and second bipolar transistors have identical topologies but different dopings in the respective collector region thereof;
- and
- wherein said first transistor has a collector-emitter breakdown voltage-transition frequency pair different from a collector-emitter breakdown voltage-transition frequency pair of said second transistor.
5 more elements
Dependencies are inferred from the claim text.