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US 11,295,949 B2Granted
Virtual wafer techniques for fabricating semiconductor devices
AssigneeVishay-Siliconix
InventorsM. Ayman Shibib, Kyle Terrill
Life of this patent
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Abstract
A method of fabricating semiconductor devices including epitaxially depositing a heavily doped substrate layer that is substantially free of crystalline defects on a lightly doped virtual substrate. The device regions of the semiconductor devices can be fabricated about the heavily doped substrate layer before the lightly doped virtual substrate is removed.
Claims18
A method of fabricating a semiconductor device comprising:
- depositing a heavily doped crystalline semiconductor substrate directly on a lightly doped crystalline virtual semiconductor substrate, wherein the lightly doped crystalline virtual semiconductor substrate is substantially free of crystalline defects, and the deposited heavily doped crystalline semiconductor substrate is substantially free of crystalline defects as a result of the lightly doped crystalline virtual semiconductor substrate being substantially free of crystalline defects;
- forming one or more regions of one or more devices about a surface of the heavily, doped crystalline semiconductor substrate;
- removing the lightly doped crystalline virtual semiconductor substrate from the heavily doped crystalline semiconductor substrate leaving the one or more regions of the one or more devices formed about the heavily doped crystalline semiconductor substrate;
- and
- annealing the heavily doped crystalline semiconductor substrate deposited on the lightly doped crystalline virtual semiconductor substrate to reduce one or more types of defects in the heavily doped crystalline semiconductor substrate before forming the one or more regions of the one or more devices.
2 more elements
A method of fabricating a semiconductor device comprising:
- epitaxially depositing a heavily n-doped semiconductor substrate layer directly on a tightly n-doped virtual semiconductor substrate, wherein the lightly n-doped virtual semiconductor substrate is substantially free of crystalline defects and the epitaxially deposited heavily n-doped semiconductor substrate layer is substantially free of crystalline defects as a result of the lightly n-doped virtual semiconductor substrate being substantially free of crystalline defects;
- forming one or more regions of one or more devices about a first surface of the heavily n-doped semiconductor substrate layer;
- and
- removing the lightly n-doped virtual semiconductor substrate from the heavily n-doped semiconductor substrate layer.
1 more element
A method of fabricating a semiconductor device comprising:
- depositing a buffer layer on a crystalline virtual semiconductor substrate, wherein the crystalline virtual semiconductor substrate is substantially free of crystalline defects, wherein the buffer layer is not formed from the crystalline virtual semiconductor substrate;
- epitaxially depositing a heavily doped crystalline semiconductor substrate on the buffer layer opposite the crystalline virtual semiconductor substrate, wherein the buffer layer is configured to prevent propagation of crystalline defects from the crystalline virtual semiconductor substrate into the heavily doped epitaxially deposited crystalline semiconductor substrate;
- and
- forming one or more regions of one or more devices about a surface of the heavily doped epitaxially deposited crystalline semiconductor substrate.
1 more element
Dependencies are inferred from the claim text.