Electrooptic device, driving substrate for electrooptic device, and method of manufacturing the device and substrate

A method of manufacturing a driving substrate for an electrooptic device comprising a substrate on which a display region in which pixel electrodes are arranged, and a peripheral driving circuit region arranged in the periphery of the display region are provided, the method comprising the steps of:

• forming step portions in one side of the substrate;
• depositing a single crystal semiconductor layer on the substrate including the step portions by graphoepitaxial growth by a catalytic CVD or high-density plasma CVD method using the step -portions as seeds;
• and
• forming channel, source and drain regions in the single crystal semiconductor layer after growth of the single crystal semiconductor layer;
• and
• forming gate portions of the channel regions to form top gate type first thin film transistors which constitute at least a portion of the peripheral driving circuit region, wherein the first thin film transistors are respectively provided in the step portions of the substrate.

A method of manufacturing an electrooptic device comprising a first substrate comprising a display region in which pixel electrodes are arranged, and a peripheral driving circuit region arranged in the periphery of the display region, a second substrate, and an optical material interposed between the first and second substrates, the method comprising the steps of:

• forming a material layer having high lattice matching with a single crystal semiconductor on a side of the first substrate;
• depositing a single crystal semiconductor layer on the first substrate including the material layer by hetero-epitaxial growth by a catalytic CVD or high-density plasma CVD using the material layer as a seed;
• and
• forming active elements by predetermined processing of the single crystal semiconductor layer.

A method of manufacturing a driving substrate for an electrooptic device comprising a substrate comprising a display region in which pixel electrodes are arranged, and a peripheral driving circuit region arranged in the periphery of the display region, the method comprising the steps of:

• forming a material layer having high lattice matching with a single crystal semiconductor on a side of the substrate;
• depositing a single crystal semiconductor layer on the substrate including the material layer by hetero-epitaxial growth by a catalytic CVD or high-density plasma CVD using the material layer as a seed;
• and
• forming at least active elements by predetermined processing of the single crystal semiconductor layer.