Epitaxy fast ramp temperature control systems and processes

A substrate processing method, comprising:

• seating a substrate on a substrate support located in a chamber arrangement, wherein the chamber arrangement includes:
• (i) a chamber body having an upper wall and a lower wall, (ii) the substrate support arranged within an interior of the chamber body and supported for rotation about a rotation axis, (iii) an upper heater element array supported above the upper wall of the chamber body, wherein heater elements of the upper heater element array include a first heating zone and a second heating zone, (iv) a first pyrometer supported above the upper heater element array, optically coupled to the interior of the chamber body, and configured to optically measure a center substrate temperature, (v) a second pyrometer supported above the upper heater element array, optically coupled to the interior of the chamber body, and configured to optically measure an edge substrate temperature, and (vi) a control system to control power applied to the heater elements of the upper heater element array;
• measuring the center substrate temperature of the substrate using the first pyrometer;
• measuring the edge substrate temperature of the substrate using the second pyrometer;
• determining an edge offset temperature between the edge substrate temperature and the center substrate temperature;
• during a first temperature ramping step, increasing substrate temperature from a first temperature to a second temperature at a first fast temperature ramping rate;
• during a second temperature ramping step, increasing substrate temperature from the second temperature to a third temperature at a second fast temperature ramping rate, wherein the second fast temperature ramping rate is the same as or different from the first fast temperature ramping rate, and wherein during the second temperature ramping step, the control system controls power applied to one or more heater elements in the first heating zone and one or more heater elements in the second heating zone to place and/or hold the edge offset temperature within a first predetermined range;
• and
• during a third temperature ramping step, increasing substrate temperature from the third temperature to a fourth temperature at a slow temperature ramping rate, wherein during the third temperature ramping step, the control system controls power applied to one or more heater elements in the first heating zone and one or more heater elements in the second heating zone to place and/or hold the edge offset temperature within a second predetermined range, and wherein the second predetermined range is the same as or different from the first predetermined range.