Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor
AssigneesOsaka Titanium Co., Ltd., Kyushu Electronic Metal Co., Ltd.
InventorsTetsujiro Yoshiharu, Haruo Kamise
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Abstract
A semiconductor wafer on which silicon or the like is epitaxially grown and p-type or n-type impurities are doped and which has at the rear surface except for the peripheral edge portion thereof a blocking film for preventing jumping out of impurities therefrom which causes auto-doping, thereby preventing silicon particles from being produced at the peripheral surface and preventing the semiconductor wafer from being contaminated by the silicon particles during the manufacturing of a semiconductor device.
Claims6
A manufacturing method for a semiconductor wafer, comprising the steps of forming a blocking film on the entirety of one of two opposite flat surfaces of said semiconductor wafer and along a peripheral surface thereof, and removing said blocking film from said peripheral surface, characterized by the further step of producing an epitaxial layer on the surface opposite said one flat surface, at which time said blocking film prevents volatilization of impurities which would otherwise cause autodoping.
Dependencies are inferred from the claim text.