H10P 32/14
Within a single semiconductor body or layer in a solid phase
Official title: within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
H10P32/14 (Within a single semiconductor body or layer in a solid phase) appears on 2,847 US grants and 2,404 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,847
- Published applications
- 2,404
- Assignees
- 658
- Inventors
- 4,588
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 13 | 0 |
| 1977 | 27 | 0 |
| 1978 | 21 | 0 |
| 1979 | 22 | 0 |
| 1980 | 19 | 0 |
| 1981 | 20 | 0 |
| 1982 | 14 | 0 |
| 1983 | 25 | 0 |
| 1984 | 22 | 0 |
| 1985 | 27 | 0 |
| 1986 | 29 | 0 |
| 1987 | 20 | 0 |
| 1988 | 37 | 0 |
| 1989 | 30 | 0 |
| 1990 | 26 | 0 |
| 1991 | 35 | 0 |
| 1992 | 28 | 0 |
| 1993 | 35 | 0 |
| 1994 | 37 | 0 |
| 1995 | 21 | 0 |
| 1996 | 22 | 0 |
| 1997 | 29 | 0 |
| 1998 | 28 | 0 |
| 1999 | 54 | 0 |
| 2000 | 55 | 0 |
| 2001 | 58 | 16 |
| 2002 | 38 | 43 |
| 2003 | 47 | 35 |
| 2004 | 31 | 43 |
| 2005 | 31 | 36 |
| 2006 | 29 | 27 |
| 2007 | 25 | 31 |
| 2008 | 17 | 47 |
| 2009 | 24 | 37 |
| 2010 | 39 | 38 |
| 2011 | 41 | 82 |
| 2012 | 40 | 72 |
| 2013 | 73 | 97 |
| 2014 | 77 | 115 |
| 2015 | 113 | 184 |
| 2016 | 178 | 216 |
| 2017 | 211 | 236 |
| 2018 | 203 | 196 |
| 2019 | 194 | 192 |
| 2020 | 195 | 171 |
| 2021 | 134 | 129 |
| 2022 | 98 | 103 |
| 2023 | 92 | 76 |
| 2024 | 79 | 91 |
| 2025 | 54 | 68 |
| 2026 | 30 | 23 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device with metal silicide layer and method for manufacturing the same29 Sep 2026US 12,751,059 B2Kabushiki Kaisha Toshiba
- Method of manufacturing semiconductor device8 Sep 2026US 12,733,417 B2Renesas Electronics Corporation
- Method of manufacturing semiconductor device1 Sep 2026US 12,727,183 B2Renesas Electronics Corporation
- Semiconductor device25 Aug 2026US 12,720,816 B2Mitsubishi Electric Corporation
- Method for manufacturing SOI wafer and SOI wafer11 Aug 2026US 12,707,944 B2Shin-Etsu Handotai Co., Ltd.
- Three-dimnesional memory device and method of manufacturing the same27 Aug 2026US 2026/0255601 A1Korea Advanced Institute of Science and Technology
- Systems and methods for porous backside contacts16 Jul 2026US 2026/0206313 A1IQE plc
- Sidewall doping method for 3d memory device9 Jul 2026US 2026/0198240 A1Chengdu Pbm Technology Ltd.
- Dopant diffusion with short high temperature anneal pulses2 Jul 2026US 2026/0190912 A1APPLIED Materials.Inc.
- Method of manufacturing nitrogen-doped silicon substrate25 Jun 2026US 2026/0182273 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Conformal doping via plasma activated atomic layer deposition and conformal film deposition594US 8,956,983 B2Novellus Systems, Inc. · 2015
- Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs539US 7,238,596 B2Arizona Board of Regenta, a body corporate of the State of Arizona acting for and on behalf of Arizona State University · 2007
- Method of manufacturing a semiconductor device533US 5,098,638 AMatsushita Electric Industrial Co., Ltd. · 1992
- Methods for forming doped silicon oxide thin films485US 8,679,958 B2ASM International N.V. · 2014