Method of manufacturing nitrogen-doped silicon substrate

A method of manufacturing a nitrogen-doped silicon substrate, the method comprising:

• injecting a silicon powder into a cylindrical mold of an ingot manufacturing device;
• injecting a nitride powder into a nitrogen powder injection path in the ingot manufacturing device, wherein the nitrogen powder injection path surrounds the cylindrical mold in a ring shape;
• applying a first pressure to compress the silicon powder and form a silicon powder lump in a polycrystalline state;
• applying heat to the silicon powder lump and recrystallizing the silicon powder lump into a single crystal structure;
• forming an ingot from the silicon powder lump;
• and
• slicing the ingot to form individual substrates,
• wherein, in the recrystallizing of the silicon powder lump, nitrogen is doped on a side surface of the ingot by the nitride powder injected through the nitrogen powder injection path.

A method of manufacturing a nitrogen-doped silicon substrate, the method comprising:

• in an ingot manufacturing device comprising a cylindrical mold and a nitrogen coating portion wrapping around the cylindrical mold in a ring shape, forming a polycrystalline silicon rod within the cylindrical mold;
• heating, by the nitrogen coating portion, a side surface of the polycrystalline silicon rod placed within the cylindrical mold;
• doping a nitride series material on the side surface of the polycrystalline silicon rod;
• recrystallizing the polycrystalline silicon rod into an ingot;
• and
• slicing the ingot to form individual substrates,
• wherein at least one of the individual substrates comprises a nitrogen doping area formed in a ring shape at an edge portion.