Sidewall doping method for 3d memory device
AssigneeChengdu Pbm Technology Ltd.
InventorsKe WANG, Zezhong PENG
Life of this patent
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Abstract
Provided is a sidewall doping method for a 3D (three dimensional) memory device, which belongs to the technical field of memory device manufacturing. The sidewall doping method for the 3D memory device mainly includes: conducting deposition treatment on a sidewall of the 3D memory device; conducting annealing treatment by either a long-wavelength radiation annealing process or a rapid thermal annealing process; and removing a capping layer portion by using an anisotropic SiO2 selective and specific vertical etching process; where the above deposition, annealing and etching steps are repeated for a predetermined number of cycles to complete sidewall doping.
Claims10
A sidewall doping method for a 3D memory device, comprising the steps of:
- (1) conducting deposition treatment on a sidewall of the 3D memory device by
- (1.1) firstly pre-treating a surface of the sidewall using a wet treatment process or a dry treatment process to form adhesion points for subsequent deposition;
- (1.2) secondly depositing uniformly an organic precursor containing an element to be doped on a resulting pre-treated sidewall surface by conducting self-aligned monolayer deposition through wet deposition or dry deposition;
- and
- (1.3) then depositing or filling with a silicon dioxide capping layer material using a chemical vapor deposition (CVD) or atomic layer deposition (ALD) technique;
- (2) conducting annealing treatment by either a long-wavelength radiation annealing process or a rapid thermal annealing process;
- and
- (3) removing a capping layer portion by using an anisotropic SiO2 selective and specific vertical etching process;
- wherein
- steps (1), (2), and (3) are repeated for a predetermined number of cycles to complete sidewall doping.
Dependencies are inferred from the claim text.