H10P 32/1408
From or through or into an external applied layer
Official title: {from or through or into an external applied layer, e.g. photoresist or nitride layers}
H10P32/1408 (From or through or into an external applied layer) appears on 1,597 US grants and 1,130 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,597
- Published applications
- 1,130
- Assignees
- 417
- Inventors
- 2,615
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 8 | 0 |
| 1977 | 17 | 0 |
| 1978 | 16 | 0 |
| 1979 | 15 | 0 |
| 1980 | 17 | 0 |
| 1981 | 13 | 0 |
| 1982 | 12 | 0 |
| 1983 | 19 | 0 |
| 1984 | 16 | 0 |
| 1985 | 19 | 0 |
| 1986 | 20 | 0 |
| 1987 | 12 | 0 |
| 1988 | 28 | 0 |
| 1989 | 22 | 0 |
| 1990 | 21 | 0 |
| 1991 | 26 | 0 |
| 1992 | 20 | 0 |
| 1993 | 25 | 0 |
| 1994 | 28 | 0 |
| 1995 | 18 | 0 |
| 1996 | 19 | 0 |
| 1997 | 25 | 0 |
| 1998 | 27 | 0 |
| 1999 | 48 | 0 |
| 2000 | 50 | 0 |
| 2001 | 49 | 11 |
| 2002 | 27 | 33 |
| 2003 | 39 | 23 |
| 2004 | 23 | 28 |
| 2005 | 22 | 26 |
| 2006 | 21 | 15 |
| 2007 | 17 | 21 |
| 2008 | 9 | 32 |
| 2009 | 18 | 23 |
| 2010 | 26 | 24 |
| 2011 | 29 | 67 |
| 2012 | 26 | 59 |
| 2013 | 64 | 68 |
| 2014 | 54 | 71 |
| 2015 | 65 | 80 |
| 2016 | 63 | 84 |
| 2017 | 86 | 90 |
| 2018 | 89 | 72 |
| 2019 | 75 | 78 |
| 2020 | 77 | 78 |
| 2021 | 54 | 40 |
| 2022 | 37 | 31 |
| 2023 | 33 | 34 |
| 2024 | 27 | 16 |
| 2025 | 19 | 14 |
| 2026 | 7 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of manufacturing semiconductor device8 Sep 2026US 12,733,417 B2Renesas Electronics Corporation
- Conformal boron doping method for three-dimensional structure and use thereof28 Apr 2026US 12,615,977 B2Beijing Superstring Academy of Memory Technology
- Methods of forming semiconductor devices including self-aligned p-type and n-type doped regions7 Apr 2026US 12,598,927 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Dopant diffusion with short high temperature anneal pulses24 Mar 2026US 12,588,455 B2APPLIED Materials.Inc.
- Semiconductor device, method of manufacturing the same, and electronic apparatus including the device17 Mar 2026US 12,581,678 B2Institute of Microelectronics, Chinese Academy of Sciences
- Three-dimnesional memory device and method of manufacturing the same27 Aug 2026US 2026/0255601 A1Korea Advanced Institute of Science and Technology
- Systems and methods for porous backside contacts16 Jul 2026US 2026/0206313 A1IQE plc
- Sidewall doping method for 3d memory device9 Jul 2026US 2026/0198240 A1Chengdu Pbm Technology Ltd.
- Dopant diffusion with short high temperature anneal pulses2 Jul 2026US 2026/0190912 A1APPLIED Materials.Inc.
- Method of manufacturing semiconductor device28 May 2026US 2026/0150597 A1Renesas Electronics Corporation
Most cited
By later US patents
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Conformal doping via plasma activated atomic layer deposition and conformal film deposition594US 8,956,983 B2Novellus Systems, Inc. · 2015
- Method of manufacturing a semiconductor device533US 5,098,638 AMatsushita Electric Industrial Co., Ltd. · 1992
- Methods for forming doped silicon oxide thin films485US 8,679,958 B2ASM International N.V. · 2014
- Methods for forming doped silicon oxide thin films478US 9,153,441 B2ASM International N.V. · 2015