H10P 32/1414
The applied layer being silicon, silicide or sipos
Official title: {the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon}
H10P32/1414 (The applied layer being silicon, silicide or sipos) appears on 608 US grants and 308 published applications in this corpus.
Search patents in H10P- Granted patents
- 608
- Published applications
- 308
- Assignees
- 174
- Inventors
- 995
- Latest grant
- 3 Feb 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 7 | 0 |
| 1978 | 9 | 0 |
| 1979 | 8 | 0 |
| 1980 | 10 | 0 |
| 1981 | 7 | 0 |
| 1982 | 5 | 0 |
| 1983 | 14 | 0 |
| 1984 | 7 | 0 |
| 1985 | 13 | 0 |
| 1986 | 8 | 0 |
| 1987 | 9 | 0 |
| 1988 | 14 | 0 |
| 1989 | 16 | 0 |
| 1990 | 16 | 0 |
| 1991 | 17 | 0 |
| 1992 | 11 | 0 |
| 1993 | 15 | 0 |
| 1994 | 11 | 0 |
| 1995 | 9 | 0 |
| 1996 | 9 | 0 |
| 1997 | 13 | 0 |
| 1998 | 17 | 0 |
| 1999 | 27 | 0 |
| 2000 | 25 | 0 |
| 2001 | 23 | 4 |
| 2002 | 7 | 16 |
| 2003 | 19 | 12 |
| 2004 | 12 | 9 |
| 2005 | 9 | 10 |
| 2006 | 9 | 6 |
| 2007 | 9 | 8 |
| 2008 | 3 | 9 |
| 2009 | 7 | 5 |
| 2010 | 6 | 9 |
| 2011 | 15 | 17 |
| 2012 | 7 | 21 |
| 2013 | 22 | 17 |
| 2014 | 18 | 25 |
| 2015 | 17 | 21 |
| 2016 | 13 | 17 |
| 2017 | 22 | 14 |
| 2018 | 12 | 8 |
| 2019 | 12 | 20 |
| 2020 | 20 | 17 |
| 2021 | 15 | 16 |
| 2022 | 12 | 10 |
| 2023 | 8 | 7 |
| 2024 | 6 | 2 |
| 2025 | 6 | 7 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor structure and method of manufacturing the same3 Feb 2026US 12,543,395 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor structure with multiple halo implants having epitaxial layer, high-k dielectric and metal gate28 Oct 2025US 12,457,795 B2
- High electron mobility transistor and method for fabricating the same16 Sep 2025US 12,419,071 B2United Microelectronics Corp.
- Source/drain structure for semiconductor device17 Jun 2025US 12,336,210 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing semiconductor device20 May 2025US 12,308,236 B2Mitsubishi Electric Corporation
- Semiconductor structure and method of manufacturing the same14 May 2026US 2026/0136696 A1Taiwan Semiconductor Manufacturing Company.Ltd
- High electron mobility transistor and method for fabricating the same11 Dec 2025US 2025/0380441 A1United Microelectronics Corp.
- Source/drain structure for semiconductor device11 Sep 2025US 2025/0287630 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing semiconductor device19 Jun 2025US 2025/0201563 A1Mitsubishi Electric Corporation
- Arsenic diffusion profile engineering for transistors12 Jun 2025US 2025/0194193 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Method of manufacturing a semiconductor device533US 5,098,638 AMatsushita Electric Industrial Co., Ltd. · 1992
- Field effect-controlled semiconductor component273US 6,184,555 B2Siemens Aktiengesellschaft · 2001
- Method for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regions258US 5,960,270 AMotorola, Inc. · 1999
- Process for deposition of semiconductor films239US 6,821,825 B2ASM America, Inc. · 2004