Process for deposition of semiconductor films
AssigneeASM America, Inc.
InventorsMichael A. Todd, Mark Hawkins
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Abstract
Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.
Claims25
A process for depositing a highly uniform silicon-containing material on a surface, comprising:
- providing a chamber having disposed therein a substrate, the substrate having a controlled temperature selected to establish substantially mass transport limited conditions for deposition using trisilane vapor;
- introducing a gas including trisilane into the chamber at a flow selected for improving deposition uniformity relative to deposition using silane in place of trisilane;
- and
- depositing a Si-containing film onto the substrate under said substantially mass transport limited conditions.
Dependencies are inferred from the claim text.