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US 12,336,210 B2Granted
Source/drain structure for semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Wei Lee, Chii-Horng Li, Heng-Wen Ting, Yee-Chia Yeo, Yen-Ru Lee, Chih-Yun Chin, Chih-Hung Nien, Jing-Yi Yan
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Abstract
The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over the fin structure, an epitaxial region formed in the fin structure and adjacent to the gate structure. The epitaxial region can embed a plurality of clusters of dopants.
Claims20
A method, comprising:
- forming a doped epitaxial layer over a substrate;
- forming a metallic layer on the doped epitaxial layer;
- and
- decreasing a dopant solubility of the doped epitaxial layer to form dopant clusters in the epitaxial layer.
1 more element
A method, comprising:
- forming a fin structure over a substrate:
- forming an epitaxial layer on the fin structure, wherein the epitaxial layer comprises dopants:
- depositing a metallic layer on the epitaxial layer;
- and
- forming dopant clusters in the epitaxial layer, comprising:
- forming a silicide layer between the metallic layer and the epitaxial layer;
- and
- reducing a solid solubility of the dopants in the epitaxial layer.
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A semiconductor structure, comprising:
- a fin structure on a substrate:
- an epitaxial layer on the fin structure and doped with dopants;
- a silicide layer on the epitaxial layer;
- and
- a plurality of dopant clusters embedded in the epitaxial layer and adjacent to the silicide layer, wherein the plurality of dopant clusters have a concentration greater than a maximum doping concentration determined by a solid solubility limit of the dopants in the epitaxial layer.
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Dependencies are inferred from the claim text.