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US 12,419,071 B2Granted
High electron mobility transistor and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChih-Tung Yeh, Wen-Jung Liao
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Abstract
A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a hole injection buffer layer (HIBL) on the p-type semiconductor layer, and forming a gate electrode on the HIBL.
Claims8
A method for fabricating a high electron mobility transistor (HEMT), comprising:
- forming a buffer layer on a substrate;
- forming a barrier layer on the buffer layer;
- forming a p-type semiconductor layer on the barrier layer;
- patterning the p-type semiconductor layer;
- forming a passivation layer on the p-type semiconductor layer;
- patterning the passivation layer to expose the p-type semiconductor layer;
- forming a silicon layer on the p-type semiconductor layer;
- forming a gate electrode on the silicon layer;
- performing an anneal process to transform the silicon layer into a hole injection buffer layer (HIBL);
- and
- forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.
8 more elements
Dependencies are inferred from the claim text.