Semiconductor device, method of manufacturing the same, and electronic apparatus including the device
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorHuilong Zhu
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AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorHuilong Zhu
Estimating the term…
Provided are a semiconductor device, a method of manufacturing the semiconductor device, and an electronic apparatus including the device. According to the embodiments, the semiconductor device may include: an active region extending substantially in a vertical direction on a substrate; a gate stack formed around at least a portion of an outer periphery of a middle section of the active region in the vertical direction, wherein the active region comprises a channel region opposite to the gate stack, and a first source/drain region and a second source/drain region located on two opposite sides of the channel region in the vertical direction; a first spacer located between a conductor layer of the gate stack and the first source/drain region, and a second spacer located between the conductor layer of the gate stack and the second source/drain region.
A semiconductor device, comprising:
Dependencies are inferred from the claim text.