Three-dimnesional memory device and method of manufacturing the same

Abstract

The present disclosure relates to a three-dimensional memory device and a method of manufacturing the same. The three-dimensional memory device includes a substrate, a capping layer, a fluorine-doped layer, a channel layer, a memory layer, and a gate electrode layer. The capping layer extends on the substrate in a vertical direction. The fluorine-doped layer surrounds side surfaces of the capping layer, extends in the vertical direction, and includes a fluorine-containing polymer. The channel layer surrounds side surfaces of the fluorine-doped layer, extends in the vertical direction, and includes polycrystalline silicon in which fluorine is diffused. The memory layer surrounds side surfaces of the channel layer and extends in the vertical direction. The gate electrode layer surrounds side surfaces of the memory layer.

Dependencies are inferred from the claim text.