H10P 32/141
The applied layer comprising oxides only
Official title: {the applied layer comprising oxides only}
H10P32/141 (The applied layer comprising oxides only) appears on 674 US grants and 516 published applications in this corpus.
Search patents in H10P- Granted patents
- 674
- Published applications
- 516
- Assignees
- 243
- Inventors
- 1,196
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 7 | 0 |
| 1978 | 6 | 0 |
| 1979 | 6 | 0 |
| 1980 | 5 | 0 |
| 1981 | 4 | 0 |
| 1982 | 6 | 0 |
| 1983 | 4 | 0 |
| 1984 | 5 | 0 |
| 1985 | 4 | 0 |
| 1986 | 7 | 0 |
| 1987 | 3 | 0 |
| 1988 | 10 | 0 |
| 1989 | 5 | 0 |
| 1990 | 3 | 0 |
| 1991 | 8 | 0 |
| 1992 | 6 | 0 |
| 1993 | 6 | 0 |
| 1994 | 10 | 0 |
| 1995 | 9 | 0 |
| 1996 | 7 | 0 |
| 1997 | 9 | 0 |
| 1998 | 9 | 0 |
| 1999 | 17 | 0 |
| 2000 | 24 | 0 |
| 2001 | 24 | 7 |
| 2002 | 23 | 19 |
| 2003 | 21 | 8 |
| 2004 | 10 | 19 |
| 2005 | 10 | 13 |
| 2006 | 11 | 7 |
| 2007 | 8 | 7 |
| 2008 | 4 | 15 |
| 2009 | 8 | 8 |
| 2010 | 11 | 10 |
| 2011 | 11 | 33 |
| 2012 | 15 | 26 |
| 2013 | 30 | 37 |
| 2014 | 23 | 32 |
| 2015 | 31 | 29 |
| 2016 | 23 | 34 |
| 2017 | 33 | 42 |
| 2018 | 41 | 41 |
| 2019 | 39 | 38 |
| 2020 | 40 | 35 |
| 2021 | 22 | 14 |
| 2022 | 15 | 16 |
| 2023 | 17 | 14 |
| 2024 | 10 | 3 |
| 2025 | 8 | 4 |
| 2026 | 2 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Conformal boron doping method for three-dimensional structure and use thereof28 Apr 2026US 12,615,977 B2Beijing Superstring Academy of Memory Technology
- Semiconductor device, method of manufacturing the same, and electronic apparatus including the device17 Mar 2026US 12,581,678 B2Institute of Microelectronics, Chinese Academy of Sciences
- Ultra-shallow dopant and ohmic contact regions by solid state diffusion23 Sep 2025US 12,421,604 B2Tokyo Electron Limited
- Fin field-effect transistor semiconductor device and method of forming the same23 Sep 2025US 12,424,443 B2Texas Instruments Incorporated
- Method and multi-channel devices with anti-punch-through features3 Jun 2025US 12,324,190 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Systems and methods for porous backside contacts16 Jul 2026US 2026/0206313 A1IQE plc
- Sidewall doping method for 3d memory device9 Jul 2026US 2026/0198240 A1Chengdu Pbm Technology Ltd.
- N- and p-type 2d channels via surface charge transfer from a doped oxide23 Apr 2026US 2026/0114020 A1Samsung Electronics Co., Ltd.
- Semiconductor memory devices19 Feb 2026US 2026/0052670 A1Samsung Electronics Co., Ltd.
- Sige nanoribbons for high performance transistors1 Jan 2026US 2026/0006912 A1Intel Corporation
Most cited
By later US patents
- Conformal doping via plasma activated atomic layer deposition and conformal film deposition594US 8,956,983 B2Novellus Systems, Inc. · 2015
- Methods for forming doped silicon oxide thin films485US 8,679,958 B2ASM International N.V. · 2014
- Methods for forming doped silicon oxide thin films478US 9,153,441 B2ASM International N.V. · 2015
- Methods for forming doped silicon oxide thin films475US 9,368,352 B2ASM International N.V. · 2016
- Method for forming silicon oxide cap layer for solid state diffusion process475US 9,607,837 B1ASM IP Holding B. V. · 2017