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US 9,607,837 B1Granted
Method for forming silicon oxide cap layer for solid state diffusion process
AssigneeASM IP Holding B.V.
InventorKunitoshi Namba
Life of this patent
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Abstract
A method for protecting a doped silicate glass layer includes: forming a doped silicate glass layer on a substrate in a reaction chamber by plasma-enhanced atomic layer deposition (PEALD) using a first RF power; and forming a non-doped silicate glass layer having a thickness of less than 4 nm on the doped silicate glass layer in the reaction chamber, without breaking vacuum, by plasma-enhanced atomic layer deposition (PEALD) using a second RF power, wherein the second RF power is at least twice the first RF power.
Claims20
A method for protecting a doped silicate glass layer, comprising:
- forming a doped silicate glass layer on a substrate in a reaction chamber by plasma-enhanced atomic layer deposition (PEALD) using a first RF power;
- and
- forming a non-doped silicate glass layer having a thickness of less than 4 nm on the doped silicate glass layer in the reaction chamber, without breaking vacuum, by plasma-enhanced atomic layer deposition (PEALD) using a second RF power,
- wherein the second RF power is at least twice the first RF power.
1 more element
Dependencies are inferred from the claim text.