Methods for forming doped silicon oxide thin films
AssigneeASM International N.V.
InventorsNoboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
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Abstract
The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
Claims19
A method for depositing doped silicon oxide on a substrate by an atomic layer deposition (ALD) process, the ALD process comprising at least one first deposition cycle comprising:
- exposing the substrate to a silicon precursor;
- exposing the substrate to a dopant precursor;
- and
- subsequently moving the substrate such that it is exposed to a reactive species and a doped silicon oxide is formed on the substrate.
A method of doping a silicon substrate comprising:
- depositing a solid state diffusion (SSD) layer comprising a dopant over the Si substrate surface by an atomic layer deposition process comprising:
- placing the substrate in a rotating substrate holder;
- and
- rotating the substrate holder such that the substrate is contacted with a silicon precursor, a dopant precursor, and a reactive species;
- depositing a cap layer over the SSD layer;
- and annealing the substrate to drive dopant from the SSD layer into the underlying silicon substrate.
Dependencies are inferred from the claim text.